physica status solidi (a), Volume 223, Issue 8, 22 April 2026.This study investigates how rapid thermal annealing atmospheres control defect dynamics in amorphous IGZO thin‐film transistors with HfO2 dielectrics deposited by thermal atomic layer deposition. The interplay among hydrogen interstitials, oxygen interstitials, and oxygen vacancies are shown to govern device stability under positive/negative bias ...
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