Results 71 to 80 of about 12,995,680 (232)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Pacific Institute for the Mathematical Sciences newsletter

open access: yes, 2001
Science, Faculty ofMathematics, Department ofNon ...
Pacific Institute for the Mathematical Sciences
core   +1 more source

Newsletter (Pacific Institute for the Mathematical Sciences)

open access: yes, 2004
Science, Faculty ofMathematics, Department ofNon ...
Pacific Institute for the Mathematical Sciences
core  

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Cover Vol. 53, No. 1, 2021

open access: yesJournal of Mathematical and Fundamental Sciences, 2021
Journal of Mathematical and Fundamental Sciences
doaj  

Pacific Institute for the Mathematical Sciences newsletter

open access: yes, 2014
Science, Faculty ofMathematics, Department ofNon ...
Pacific Institute for the Mathematical Sciences
core  

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Front Matter Vol. 53, No. 1, 2021

open access: yesJournal of Mathematical and Fundamental Sciences, 2021
Journal of Mathematical and Fundamental Sciences
doaj  

Advances in Sustainable and Wearable Textile Based Soft Robotics

open access: yesAdvanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas   +6 more
wiley   +1 more source

Structure‐Guided Dynamical Mechanics in Bioinspired Double Twisted Laminated Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
This work explores a dynamic mechanistic study of crack propagation and puncture testing via real‐time monitoring of crack initiation, propagation, and termination through nature‐inspired single and double twisted architectures fabricated from cellulose nanocrystals.
Justin Brackenridge   +4 more
wiley   +1 more source

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