Results 311 to 320 of about 5,731,370 (400)

High‐Resolution and Surface‐Sensitive Tip‐Enhanced Raman Spectroscopy Characterization of Strained‐Silicon Devices through Cleanroom‐Compatible Plasmonic Probes

open access: yesAdvanced Materials Interfaces, EarlyView.
This paper demonstrates how Tip‐Enhanced Raman Spectroscopy (TERS) can detect diverse levels of strain in a SiGe‐Si structure in less than 20 nm of depth with lateral resolution under 100 nm. The measures are performed with a TiN‐coated probe, which secures a remarkable enhancement of the optical signal, while being chemically stable to allow TERS to ...
Chiara Mancini   +6 more
wiley   +1 more source

The Fabrication of Fluorine‐Free Stretchable Superhydrophobic Films Using Inverse Vulcanization Sulfur Polymer

open access: yesAdvanced Materials Interfaces, EarlyView.
This study developed a new type of flexible, water‐repellent coating made from sulfur, a byproduct of the petrochemical industry, combined with silica nanoparticles, while demonstrating how coating thickness impacts fragmentation during stretching, affecting wettability.
Vinicius Diniz   +3 more
wiley   +1 more source

Evaluating the Local Bandgap Across inxGa1‐xas Multiple Quantum Wells in a Metamorphic Laser via Low‐Loss EELS

open access: yesAdvanced Materials Interfaces, EarlyView.
This research explores local bandgap, composition, and strain variations across InxGa₁−xAs quantum wells within a metamorphic laser structure using high‐resolution scanning transmission electron microscopy (STEM) and low‐loss electron energy loss spectroscopy (EELS). Results reveal significant inhomogeneities, particularly near interfaces, with bandgap
Nicholas Stephen   +10 more
wiley   +1 more source

Self‐Organized Growth of Catalyst‐Free Single Crystal WnO3n‐2 (n = 25) Nanowire Bundles on Si (111) via Selective He+ Ion Irradiation

open access: yesAdvanced Materials Interfaces, EarlyView.
A novel and efficient method is explored to synthesize 1D single‐crystal sub‐stoichiometric WnO3n‐2 (n = 25) nanowire bundles. The approach utilizes selective low‐energy He+ ion irradiation (27 eV) on Mo‐Ni doped WOx surface, achieving efficient catalyst‐free self‐organized growth of high aspect ratio nanowires at the temperature of 700 °C.
Maryna Bilokur   +3 more
wiley   +1 more source

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