Results 221 to 230 of about 3,096,808 (374)
Charge Transport in Ternary Charge‐Transfer Solid Solution Single Crystals
This study deconvolutes the roles of indirect (superexchange) and direct electronic coupling on charge transport in single crystals of an organic charge‐transfer molecular semiconductor (OSC). This model system elegantly demonstrates that structural defects introduced by chemical dopants play a significant role in the electronic performance ...
Jonathan C. Novak +7 more
wiley +1 more source
The intergenerational transmission of mathematics achievement in middle childhood: A prospective adoption design. [PDF]
Borriello GA +6 more
europepmc +1 more source
Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa +6 more
wiley +1 more source
Does motivation lead to academic success, or conversely? Reciprocal relations between autonomous and controlled motivation, and mathematics achievement. [PDF]
Santana-Monagas E +2 more
europepmc +1 more source
Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann +8 more
wiley +1 more source
The indirect effects of school bullying on mathematics achievement: the mediating roles of teacher-student relationships, sense of belonging and differences between genders. [PDF]
Ren R, Chen W, Zhao S.
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source

