Results 61 to 70 of about 30,811 (272)

Fluorophobic Effect Enables Selective Detection of PFAS in Water with Electrolyte‐Gated Organic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
PerFluoroAlkyl Substances (PFAS) are responsible of major and persistent environmental pollution worldwide. This work demonstrates an ultra‐sensitive sensor for PFAS based on an organic transistor whose gate is functionalized with a binary self‐assembled monolayer containing a perfluorinated molecule.
Rian Zanotti   +8 more
wiley   +1 more source

Enhanced Switching Performance in Single‐Crystalline PbTiO3 Ferroelectric Memristors for Replicating Synaptic Plasticity

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li   +7 more
wiley   +1 more source

Eigenvalue for Densely Defined Perturbations of Multivalued Maximal Monotone Operators in Reflexive Banach Spaces

open access: yesJournal of Mathematics, 2013
Let be a real reflexive Banach space and let be its dual. Let be open and bounded such that . Let be maximal monotone with and . Using the topological degree theory developed by Kartsatos and Quarcoo we study the eigenvalue problem where the ...
Boubakari Ibrahimou
doaj   +1 more source

Magnetic‐Field Dependent VB− Spin Decoherence in Hexagonal Boron Nitrides: A First‐Principles Study

open access: yesAdvanced Functional Materials, EarlyView.
This study investigates the decoherence of the VB− defect in h‐BN under external magnetic fields using first‐principles quantum many‐body simulations. A transition boundary distinguishing distinct decoherence regimes is identified, with its dependence on isotopic composition.
Jaewook Lee   +3 more
wiley   +1 more source

Understanding Decoherence of the Boron Vacancy Center in Hexagonal Boron Nitride

open access: yesAdvanced Functional Materials, EarlyView.
State‐of‐the‐art computations unravel the intricate decoherence dynamics of the boron vacancy center in hexagonal boron nitride across magnetic fields from 0 to 3 T. Five distinct regimes emerge, dominated by nuclear spin interactions, revealing optimal coherence times of 1–20 µs in the 180–350 mT range for isotopically pure samples.
András Tárkányi, Viktor Ivády
wiley   +1 more source

Higher‐Order Temporal Dynamics in Complementary Charge Trap Memristor for High‐Dimensional Reservoir Computing

open access: yesAdvanced Functional Materials, EarlyView.
A complementary charge‐trap memristor (CoCTM) featuring a unique current transient with tunable overshoot‐relaxation dynamics is introduced for high‐resolution reservoir computing. By leveraging higher‐order temporal dynamics from engineered trapping layers, the device generates multiple output states from a single input, forming rich, high‐dimensional
Alba Martinez   +9 more
wiley   +1 more source

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