Results 151 to 160 of about 198,011 (278)

Active Metamaterials with Tunable Shear Nonreciprocity and Nonlinear Dynamics

open access: yesAdvanced Science, EarlyView.
Active gear‐based mechanical metamaterials enable simultaneous control of translational and torsional stiffnesses by 30–100×, break shear reciprocity under positive versus negative loads, broadly tune resonant frequencies, and offer programmable dynamic responses.
Xin Fang, Miao Yu, Dianlong Yu, Li Cheng
wiley   +1 more source

Molecular Polariton Dynamics in Realistic Cavities. [PDF]

open access: yesJ Chem Theory Comput
Bustamante CM   +5 more
europepmc   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

open access: yesAdvanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade   +10 more
wiley   +1 more source

Conformal Reconfigurable Intelligent Surfaces: A Cylindrical Geometry Perspective

open access: yesAdvanced Electronic Materials, EarlyView.
Cylindrical reconfigurable intelligent surfaces are explored for low‐complexity beam steering using one‐bit meta‐atoms. A multi‐level modeling approach, including optimization‐based synthesis, demonstrates that even minimal hardware can support directive scattering.
Filippo Pepe   +4 more
wiley   +1 more source

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

open access: yesAdvanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee   +9 more
wiley   +1 more source

Pressure‐Induced Structural and Magnetic Evolution in Layered Antiferromagnet YbMn2Sb2

open access: yesAdvanced Electronic Materials, EarlyView.
Pressure tunes the delicate balance between structure, magnetism, and electronic states in quantum materials. In YbMn2Sb2, high‐pressure X‐ray and neutron diffraction reveal a trigonal‐to‐monoclinic transition near 3.5 GPa, accompanied by unconventional magnetic ordering.
Mingyu Xu   +9 more
wiley   +1 more source

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