Results 101 to 110 of about 25,515 (258)
Sistemnì Doslìdženâ ta Informacìjnì Tehnologìï, 2018 The paper deals with symmetric GARCH(p,q) model. Assuming that there exists defined by this model stationary time series, we have proposed the necessary and sufficient condition for exponential mean square convergence of any stochastic recurrent ...
J. Carkovs, N. Gutmanis
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Journal of Computational and Applied Mathematics, 2012 A theorem is proved that establishes numerical exponential mean square stability (NEMSS) of the classic theta method and the split-step theta method for systems of linear Itô stochastic differential equations (SDEs) that are exponentially mean square stable.
openaire +2 more sources
Understanding Operando Water Management in Hydroxide‐Exchange‐Membrane Fuel Cells
Advanced Materials Interfaces, EarlyView.Effective water management is vital for high‐performance hydroxide‐exchange‐membrane fuel cells. Using a custom water‐flux station, this study quantifies how membrane thickness, microporous layers, and operating conditions dictate internal water transport.
Catherine M. Weiss +4 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Correction to: Exponential mean-square stability properties of stochastic linear multistep methods [PDF]
Advances in Computational Mathematics, 2021 Evelyn Buckwar, Raffaele D'Ambrosio
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Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation
Advanced Materials Interfaces, EarlyView.Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales +10 more
wiley +1 more source
Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors
Advanced Materials Interfaces, EarlyView.The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov +8 more
wiley +1 more source
A Survey of Interlayer Interaction Models for Graphene and Other 2D Materials
Advanced Materials Interfaces, EarlyView.Van der Waals interactions arising from electronic polarization at atomically close interfaces generate corrugated interlayer energy landscapes that govern normal and tangential tractions. This review presents an overview of quantum, atomistic, analytical, and continuum modeling approaches, highlighting their roles across length scales in capturing ...
Gourav Yadav +2 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.Microfluidic engineering enables the fabrication of chitosan‐coated, melatonin‐loaded nanoemulsions with controlled release and enhanced physicochemical stability for space pharmaceutics. Interfacial biopolymer coating modulates droplet behavior under accelerated thermal stress and simulated microgravity.
Modupe Adebowale +3 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.This work highlights the impact of incorporating graphene nanoflakes into precursor inks of MAPbBr3 for inkjet‐printed optoelectronic device applications. A substantial modification of the crystallization dynamics is reported despite miniscule concentrations.
Kenneth Lobo +12 more
wiley +1 more source