Results 211 to 220 of about 117,263 (244)
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
The prefrontal cortex controls memory organization in the hippocampus. [PDF]
de Sousa AF +8 more
europepmc +1 more source
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
Mechanisms through which sleep influences intrusive memories: protocol for a trauma film paradigm study. [PDF]
Ogden J, Jobson L, Drummond SPA.
europepmc +1 more source
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen +15 more
wiley +1 more source
The long-term psychological processing of an autism spectrum disorder diagnosis in parents. [PDF]
Martino ML, Vela L, Quitadamo M.
europepmc +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Self-Defining Memories and Well-Being in European American and Chinese Emerging Adults. [PDF]
Li W, Duman Ç, Hou W, Koh JBK, Wang Q.
europepmc +1 more source
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
Cross-cultural validation of the birth memories and recall questionnaire: a cross-sectional study among Chinese postpartum women. [PDF]
Zhu Y +6 more
europepmc +1 more source

