Results 151 to 160 of about 1,758,697 (309)

Asynchronous Memory Access Unit: Exploiting Massive Parallelism for Far Memory Access [PDF]

arXiv
The growing memory demands of modern applications have driven the adoption of far memory technologies in data centers to provide cost-effective, high-capacity memory solutions. However, far memory presents new performance challenges because its access latencies are significantly longer and more variable than local DRAM.
arxiv  

A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors

Advanced Functional Materials, EarlyView.
Artificial neurons created using CMOS technology often require a large number of transistors and capacitors. This study introduces an artificial thalamic neuron that employs only five CMOS compatible ferroelectric transistors. The manufactured thalamic neuron demonstrates leaky integrate‐and‐fire‐or‐burst (LIFB) functionalities, featuring self ...
Andreas Grenmyr, Jiayuan Zhang, Jingxuan Sun, Kenta Moto, Stefan Wiefels, Seong‐Ryong Koh, Detlev Grützmacher, Qing‐Tai Zhao   +7 more
wiley   +1 more source

THE COMPARISON OF LONG SHORT-TERM MEMORY AND BIDIRECTIONAL LONG SHORT-TERM MEMORY FOR FORECASTING COAL PRICE

Barekeng
Coal remains vital for global energy despite recent demand fluctuations due to the COVID-19 pandemic and geopolitical tensions. The International Energy Agency (IEA) projected a decline in global coal demand starting in early 2024, driven by increasing ...
Indra Rivaldi Siregar, Adhiyatma Nugraha, Khairil Anwar Notodiputro, Yenni Angraini, Laily Nissa Atul Mualifah   +4 more
doaj   +1 more source

Analyzing a Two-Tier Disaggregated Memory Protection Scheme Based on Memory Replication [PDF]

arXiv
As memory technologies continue to shrink and memory error rates increase, the demand for stronger reliability becomes increasingly critical. Fine-grain memory replication has emerged as an appealing approach to improving memory fault tolerance by augmenting conventional memory protection based on error-correcting codes with an additional layer of ...
arxiv  

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Integration of Perovskite/Low‐Dimensional Material Heterostructures for Optoelectronics and Artificial Visual Systems

Advanced Functional Materials, EarlyView.
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du, Junjie Yang, Ziyu Lv, Yongbiao Zhai, Zezhuang Yi, Yuhui Xie, Ming‐Lin Zheng, Xiangyu Ma, Guodong Gong, Yan Wang, Ye Zhou, Su‐Ting Han   +11 more
wiley   +1 more source

Experimental Effects of Acute Exercise on Iconic Memory, Short-Term Episodic, and Long-Term Episodic Memory. [PDF]

J Clin Med, 2018
Yanes D, Loprinzi PD.
europepmc   +1 more source

Strain Partitioning at the Oxide Interface for the Isothermal Phase Transition in Freestanding Tri‐Layers

Advanced Functional Materials, EarlyView.
The metal–insulator transition temperature (TMI) is continuously tuned by the systematic change of relative thickness in VO2 and TiO2 films (tVO2/tTiO2${t_{{\mathrm{V}}{{\mathrm{O}}_2}}}/{t_{{\mathrm{Ti}}{{\mathrm{O}}_2}}}$) in freestanding TiO2/VO2/TiO2 tri‐layers.
Sungwon Lee, Dong Kyu Lee, Yunkyu Park, Hyeji Sim, Si‐Young Choi, Junwoo Son   +5 more
wiley   +1 more source

Enhanced Electromechanical Response in 1D Hybrid Perovskites: Coexistence of Normal and Relaxor Ferroelectric Phases

Advanced Functional Materials, EarlyView.
The dynamic polarization reversal of coexisting normal and relaxor ferroelectrics in 1D TMAPbI₃ (tetramethylammonium, TMA) is deciphered through combined experimental and theoretical approaches. By bridging atomic‐scale motion, macroscopic polarization switching, and depolarization effects, a universal methodology is established to engineer next ...
Chen Xue, Masaru Fujibayashi, Hengming Huang, Chisato Kato, Katsuya Ichihashi, Jun Manabe, Sadafumi Nishihara, Xiao‐Ming Ren, Takayoshi Nakamura   +8 more
wiley   +1 more source

Games and Phone Numbers: Do Short Term Memory Bounds Affect Strategy Behavior? [PDF]

Research in experimental and behavioral game theory has revealed a substantial and persistent degree of heterogeneity in the strategic behavior of real individuals.
Giovanna Devetag, Massimo Warglien
core