Results 81 to 90 of about 333,955 (198)

Magnetic Unclonable Functions Leveraging Remanence and Anhysteretic States

open access: yesAdvanced Functional Materials, EarlyView.
A micrometric array of magnetic pillars provides a stable and unclonable hardware for generating cryptographic keys. From a single device, the ability is demonstrated to produce a 470‐bit key while also offering a reconfigurable mode of operation.
Alessandro Magni   +6 more
wiley   +1 more source

Near‐Sensor Analog Computing via Monolithic 3D Piezoelectric Sensor–FeFET for Tactile Sensing System

open access: yesAdvanced Functional Materials, EarlyView.
A monolithic 3D‐integrated tactile system combines a piezoelectric sensor and ferroelectric field‐effect transistor (FeFET) to process both static and dynamic pressure signals directly at the sensor node. The system enables in‐sensor analog noise filtering with multi‐level memory states, achieving high sensitivity and ultra‐low power operation (≈10 nW),
Woongjin Kim   +6 more
wiley   +1 more source

Disentangling phonology from phonological short-term memory in Alzheimer's disease phenotypes. [PDF]

open access: yesAlzheimers Res Ther
Henderson SK   +6 more
europepmc   +1 more source

Emergent Spin‐Glass Behavior in an Iron(II)‐Based Metal–Organic Framework Glass

open access: yesAdvanced Functional Materials, EarlyView.
A one‐pot, solvent‐free synthesis yields an Fe2+‐based metal‐organic framework (MOF) glass featuring a continuous random network structure. The material exhibits spin‐glass freezing at 14 K, driven by topological‐disorder and short‐range magnetic frustration, showcasing the potential of MOF glasses as a plattform for cooperative magnetic phenomena in ...
Chinmoy Das   +8 more
wiley   +1 more source

Thickness‐Dependent Skyrmion Evolution in Fe3GeTe2 During Magnetization Reversal

open access: yesAdvanced Functional Materials, EarlyView.
Thickness‐ and field‐dependent magnetic domain behavior in 2D van der Waals Fe3GeTe2 is studied using Lorentz TEM and micromagnetic simulations. A patch‐like domain phase evolves from skyrmions during magnetization reversal, and step edges between thickness regions act as pinning sites.
Jennifer Garland   +9 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

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