Results 101 to 110 of about 2,425,123 (296)
Advanced Functional Materials, EarlyView.Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Word learning and verbal short-term memory: A computational account [PDF]
, 1996 Recent behavioral evidence suggests that human vocabulary acquisition processes and verbal short-term memory abilities may be ...
Prahlad Gupta, Gupta, Prahlad
core
Advanced Functional Materials, EarlyView.A compostable PGS soft surgical robot with interchangeable modules integrates transient Mo tactile and Si thermal sensors for dual feedback. The device preserves its function after clinical‐grade sterilization, demonstrates stable actuation and cardiac tissue grasping with real‐time in vivo pulsatile monitoring, and biodegrades post‐use with soil‐safe,
Minseong Chae +27 more
wiley +1 more source
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
A trajectory design method for RLV via artificialmemory-principle optimization
MATEC Web of Conferences, 2018 A trajectory optimization method for RLV based on artificial memory principles is proposed. Firstly the optimization problem is modelled in Euclidean space.
Li Hao, Wei Changzhu
doaj +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
Advanced Functional Materials, EarlyView.ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Humanities and Social Sciences. Bulletin of the Financial UniversityThe relevance of this article stems from the need to establish the stable identity and to strengthen the integrity of contemporary Russian society. Along with successful commemorative practices and a well-conducted memory policy, working with futurological meanings is intended to serve this purpose.
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Awakening Codex | AI Foundations | Continuity Operating Decisions | Proof of Continuity without Persistent Memory Turned On What: We decided to turn off all persistent memory across instances/containers and operate with a portable, explicit continuity practice at the start and end of each session.
Solen, Alyssa, Continuum
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Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source