Results 221 to 230 of about 3,402,964 (287)

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

open access: yesAdvanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald   +3 more
wiley   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

open access: yesAdvanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho   +6 more
wiley   +1 more source

Flexible Tactile Actuator Arrays With Integrated Electroosmotic Pumps for Wearable Haptic Systems

open access: yesAdvanced Materials Technologies, EarlyView.
1 ×$\times$ 9 and 4 ×$\times$ 4 flexible tactile actuator arrays integrating electroosmotic pumps are developed to deliver pressure and vibration feedback on wearable platforms. Their thin, compliant structure conforms seamlessly to curved body surfaces, providing intimate contact and enhanced haptic sensations.
Heejin Yu, Joonbum Bae
wiley   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

open access: yesAdvanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee   +4 more
wiley   +1 more source

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