Results 181 to 190 of about 5,293,292 (333)
Memory Matrix Using Ferroelectric Condensers as Bistable Elements [PDF]
, 1955 Charles F. Pulvari
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Advanced Functional Materials, EarlyView.The orbital‐current‐induced torque is investigated as an efficient method for controlling magnetization direction. By introducing Ti as an orbital current source in Ti/Ta (or Pt)/CoFeB/MgO structures, the switching current is reduced by ∼25% compared to a conventional spin‐orbit torque structure of Ta/CoFeB/MgO.
So y. Shin +3 more
wiley +1 more source
Phase Memory of the Ear : a Proof of the Resonance Hypothesis [PDF]
, 1948 R. J. Pumphrey, T. Gold
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Advanced Functional Materials, EarlyView.This review highlights recent advances in engineering artificial antigen‐presenting cells (aAPCs) as alternatives to dendritic cells for T cell expansion. Key design principles inspired by the immunological synapse are discussed, with emphasis on strategies for polyclonal and antigen‐specific T cell expansion.
Nguyen Thi Nguyen, Yu Seok Youn
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Response to “Avoiding Methodological Bias in Studies of Amyloid Imaging Results Disclosure”
Alzheimer’s Research & Therapy, 2019 Joshua D. Grill +3 more
doaj +1 more source
TX-0, a transistor computer with a 256 by 256 memory [PDF]
, 1957 J. L. Mitchell, K. H. Olsen
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Advanced Functional Materials, EarlyView.This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye +6 more
wiley +1 more source
A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors
Advanced Functional Materials, EarlyView.Artificial neurons created using CMOS technology often require a large number of transistors and capacitors. This study introduces an artificial thalamic neuron that employs only five CMOS compatible ferroelectric transistors. The manufactured thalamic neuron demonstrates leaky integrate‐and‐fire‐or‐burst (LIFB) functionalities, featuring self ...
Andreas Grenmyr +7 more
wiley +1 more source