Results 211 to 220 of about 5,293,292 (333)
A special-purpose solid-state computer using sequential access memory [PDF]
W. A. Cornell
openalex +1 more source
Fractional Skyrmion Tubes in Chiral‐Interfaced 3D Magnetic Nanowires
In chiral 3D helical magnetic nanowires, the coupling between the geometric and magnetic chirality provides a way to create topological spin states like vortex tubes. Here, it is demonstrated how the breaking of this coupling in interfaced 3D nanowires of opposite chirality leads to even more complex topological spin states, such as fractional ...
John Fullerton+11 more
wiley +1 more source
Recent thymic emigrants preferentially undergo memory inflation after persistent infection. [PDF]
Hilt ZT+7 more
europepmc +1 more source
Ozone‐based gas‐phase metal‐assisted chemical etching enables unprecedented room‐temperature fabrication of high‐quality silicon nanowires. The superior oxidation potential of O3 drives rapid vertical etching (1 µm min−1) while maintaining exceptional structural integrity. The pristine nanowire surfaces enable high‐performance core‐shell photodetectors
Hyein Cho+11 more
wiley +1 more source
Event Segmentation Interventions Improve Memory for Naturalistic Events. [PDF]
Smith ME, Zacks JM.
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Phase Engineering of a 1D van der Waals Thin Film
Explores the transformative potential of 1D van der Waals materials, focusing on the monoclinic‐to‐tetragonal phase transition in NbTe4, its atomic‐scale mechanisms, and significant metal‐insulator transition (MIT) behavior. Highlights advanced imaging insights and the applications of reversible phase transitions in memory devices, sensors, and ...
Yi Shuang, Daisuke Ando, Yuji Sutou
wiley +1 more source
Selecting learning partners: memory for participation and competence. [PDF]
Ülker O, Bodemer D.
europepmc +1 more source
Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong+22 more
wiley +1 more source