Results 241 to 250 of about 5,619,365 (290)

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn2PdIn

open access: yesAdvanced Functional Materials, EarlyView.
Mn2PdIn, a frustrated inverse Heusler alloy, showing electronic‐structure driven anomalous Hall effect with Weyl crossings, Fermi‐surface nesting and near‐zero magnetization ideal for low‐magnetization spintronics. Abstract Noncollinear magnets with near‐zero net magnetization and nontrivial bulk electronic topology hold significant promise for ...
Afsar Ahmed   +7 more
wiley   +1 more source

Self‐Immolative Activatable Nanoassembly toward Immuno‐Photodynamic Therapy in TME

open access: yesAdvanced Functional Materials, EarlyView.
A quinone methide‐gated, self‐immolative, H2O2‐responsive nano‐photosensitizer (Pyz/PS) is developed for targeted immuno‐photodynamic therapy. Pyz/PS selectively activates within tumor microenvironments, restores photosensitizer activity, generates ROS, and depletes intracellular GSH, enhancing oxidative stress.
Jing Li   +10 more
wiley   +1 more source

Temporal dynamics of negative emotional memory reprocessing during sleep [PDF]

open access: gold
Serik Tabarak   +12 more
openalex   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

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