Results 61 to 70 of about 2,882,803 (299)
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Working memory in children with developmental disorders [PDF]
The aim of the present study was to directly compare working memory skills across students with different developmental disorders to investigate whether the uniqueness of their diagnosis would impact memory skills.
Tracy, Alloway +6 more
core +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
One of the subsystems of memory that is allocated from the bio-psychological and sociological points of view is autobiographical memory characterized by certain functional patterns. Autobiographical practices constitute socialized, culturally determined,
Rebrina Larisa, Shamne Nikolay
doaj +1 more source
This study investigated explicit knowledge of autobiographical memory functions using a newly developed questionnaire. European and Asian American adults (N = 57) and school-aged children (N = 68) indicated their agreement with 13 statements about why ...
Song, Qingfang +3 more
core +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe
By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta +11 more
wiley +1 more source
Exact Discretization of an Economic Accelerator and Multiplier with Memory
Fractional differential equations of macroeconomics, which allow us to take into account power-law memory effects, are considered. We describe an economic accelerator and multiplier with fading memory in the framework of discrete-time and continuous-time
Valentina V. Tarasova, Vasily E. Tarasov
doaj +1 more source

