Results 91 to 100 of about 309,726 (309)

Memory-turn: архитектура биоэтики как диагностика нового поворота в философии

, 2012
На основе информационно-синергетического подхода обнаружены парадоксы современного состояния социокультурных систем. Их решение требует нового диалога с памятью культуры, или memory-turn, который современная философия стихийно совершает в процессе ...
Мелик-Гайказян, Ирина Вигеновна
core  

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

Advanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand, Kaja H. Hiorth, David Gao, Valeri Afanas'ev, Jaakko Akola, Alexander L. Shluger   +5 more
wiley   +1 more source

Memory, language and trauma in the work of Félix Grande

, 2010
PhDMy thesis explores how memory and trauma permeate the work of the poet Félix Grande (Mérida, Spain, 1937). It addresses the question of how his particular understanding of memory is opposed to a rather bleak view of it held by many other Spanish ...
Cáceres Casillas, María Pilar
core  

From introspections, brain scans, and memory tests to the role of social context : advancing research on interaction and learning [PDF]

, 2006
The goal of this epilogue is to use the methodological contributions of the studies presented in this special issue as a starting point for suggestions about methodology in conducting future interaction research. As is the case in most developing fields,
Mackey, Alison
core  

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

FLARE: A design environment for FLASH-based space applications [PDF]

, 2009
Designing a mass-memory device (i.e., a solid-state recorder) is one of the typical issues of mission-critical space system applications. Flash-memories could be used for this goal: a huge number of parameters and trade-offs need to be explored.
Stefano Di Carlo, Caramia, M., Michele Fabiano, Caramia M., Fabiano, Michele, Paolo Prinetto, Prinetto, Paolo Ernesto, Di Carlo, Stefano, Maurizio Caramia   +8 more
core   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

Advanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo, Xiaotao Wang, Guannan Mu, Proloy Taran Das, Igor Veremchuk, Conrad Schubert, Aaron D. Cross, Yevhen Zabila, Xuan Peng, Larysa Baraban, Denys Makarov   +10 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

A trajectory design method for RLV via artificialmemory-principle optimization

MATEC Web of Conferences, 2018
A trajectory optimization method for RLV based on artificial memory principles is proposed. Firstly the optimization problem is modelled in Euclidean space.
Li Hao, Wei Changzhu
doaj   +1 more source