Results 121 to 130 of about 36,882 (315)
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
Advanced Electronic Materials, EarlyView.This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
Journal of Electrical Bioimpedance, 2013 Reasoned by its dynamical behavior, the memristor enables a lot of new applications in analog circuit design. Since some realizations have been shown (e.g.
Pabst Oliver, Schmidt Torsten
doaj +1 more source
Advanced Electronic Materials, EarlyView.Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam +3 more
wiley +1 more source
Frontiers in NanotechnologyIn this work, a low-voltage-driven theoretical memristor framework is presented with its in-depth parametric evaluation and its neuromorphic computing functionalities, including spike-time dependent plasticity (STDP) via Hebbian learning rules.
Aarti Dahiya +3 more
doaj +1 more source
ReRAM/CMOS Array Integration and Characterization via Design of Experiments
Advanced Electronic Materials, EarlyView.This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen +7 more
wiley +1 more source
Nano Materials ScienceArtificial synapse inspired by the biological brain has great potential in the field of neuromorphic computing and artificial intelligence. The memristor is an ideal artificial synaptic device with fast operation and good tolerance.
Fang Luo +5 more
doaj +1 more source
Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors
Advanced Electronic Materials, EarlyView.The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár +12 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin +10 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
RRAM Variability Harvesting for CIM‐Integrated TRNG
Advanced Electronic Materials, EarlyView.This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende +4 more
wiley +1 more source