Results 121 to 130 of about 14,306 (300)

Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration

Advanced Science, EarlyView.
This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang, Yun Ji, Sanchali Mitra, Yufei Shi, Haofei Zheng, Yee Sin Ang, Kah‐Wee Ang   +6 more
wiley   +1 more source

Stability analysis supports memristor circuit design

, 2015
In this paper1 a stability analysis sheds light into aspects of memristor circuit design, revealing a circuit theoretic technique for the stabilization of the NDR portion of the device DC characteristic.
Alon Ascoli, Slesazeck S, Tetzlaff R, Mähne H, Ronald Tetzlaff, S. Slesazeck, H. Mahne, Ascoli A, T. Mikolajick, Mikolajick T   +9 more
core   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

LinearandNonlinearModelsofHPTiO₂MemristorandTheirPrintfingerAnalyses

工程科学与技术, 2014
:To analyze the printfingers of HP TiO2 memristor model and compare the differences between the printfingers of the basic model and nonlinear window function models, the features of several typical HP TiO2 memristor nonlinear window function models were ...
doaj  

Floating memristor emulator with subthreshold region

, 2017
Memristor which is recently discovered and known as missing circuit element is an important for memory, nonlinear and neuromorphic circuit designs. Modeling of memristor devices is essential for memristor based circuit design.
Babacan, Yunus, Kacar, FIRAT
core   +1 more source

Scalable Crackle‐Lithography for Multifunctional Enclosed Plastic Nanofluidic Devices

Advanced Science, EarlyView.
Crackle‐lithography enables scalable fabrication of enclosed plastic‐substrate‐based nanofluidic devices with interconnected nanochannels that enable molecular transport, optical interrogation, confined electroless copper deposition, and ionic memristive behavior.
Tirumala Rao Dumpala, S. Kiruthika, Siddhi Vinayak Pandey, Junyang Zhang, Solleti Goutham, Marcos Vinicius Surmani Martins, Harry Whittingham, Boya Radha, Ashok Keerthi   +8 more
wiley   +1 more source

Energy-Efficient Neuromorphic Architectures for Nuclear Radiation Detection Applications

Sensors
A comprehensive analysis and simulation of two memristor-based neuromorphic architectures for nuclear radiation detection is presented. Both scalable architectures retrofit a locally competitive algorithm to solve overcomplete sparse approximation ...
Jorge I. Canales-Verdial, Jamison R. Wagner, Landon A. Schmucker, Mark Wetzel, Philippe Proctor, Merlin Carson, Jian Meng, Nathan J. Withers, Charles Thomas Harris, John J. Nogan, Denise B. Webb, Adam A. Hecht, Christof Teuscher, Marek Osiński, Payman Zarkesh-Ha   +14 more
doaj   +1 more source

System design with memristor technologies

, 2018
System Design with Memristor Technologies explores design solutions for memristors, covering research and development trends in memristor technology, fabrication, modelling, and applications, and the design and implementation of arithmetic units using ...
Guckert, Lauren, Swartzlander, Earl E, Jr   +1 more
core  

Coexisting Volatile and Nonvolatile Switching in 3D ALD‐IGZO Vertical RRAM for Fully Hardware‐Based Wide Reservoir Computing

Advanced Science, EarlyView.
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Seeun Lee, Jaewon Park, Nawoon Kim, Seohyeon Ju, Seong‐Cheol Jang, Hyun‐Suk Kim, Sungjun Kim   +6 more
wiley   +1 more source

Insights on memristor modeling

, 2013
This work sheds some light into the crucial discussion over which memristor model should be adopted in the design of memristor-based electronic circuits.
A. Ascoli, R. Tetzlaff, F. Corinto, V. Senger   +3 more
core   +1 more source