Results 81 to 90 of about 19,562 (279)

Research on the stability of memristive neural network based on MNIST

Dianzi Jishu Yingyong, 2019
The stability problem of memristor may affect the performance of memristive neural network. In order to explore it, a memristive back propagation(BP) neural network, in which the memristors are the synapses, is constructed based on the equivalent ...
Tian Ye, Zhu Ruohua, Tang Zhiri, Chang Sheng   +3 more
doaj   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory Cell

Advances in Electrical and Computer Engineering, 2016
The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change.
DAOUD, A. A. D., DESSOUKI, A. A. S., ABUELENIN, S. M.   +2 more
doaj   +1 more source

Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols

Advanced Materials, EarlyView.
We present a microfabrication and integration strategy for lead halide perovskite photodetectors on electronic readouts. Standard photolithography, aqueous processing, selective transparent electrode etching, and plasma‐assisted pixel isolation enable precise monolithic integration of patterned 400 × 400 perovskite microphotodetector arrays on a CMOS ...
Sergey Tsarev, Erfu Wu, Kyuik Cho, Xuqi Liu, Quang Nhat Dang Lung, Emeric Hartman, Tian Sun, Bekir Turedi, Gebhard J. Matt, Stefanie Frick, Sebastian Siol, Taekwang Jang, Ivan Shorubalko, Sergii Yakunin, Maksym V. Kovalenko   +14 more
wiley   +1 more source

An improved crossbar array of memristor

Journal of Measurement Science and Instrumentation, 2017
This paper conducts an analysis of HP model of a memristor and memory cells of a differential type memristor,forms a classic array of the memristor using the HP model,and does the stimulation of its storage capacity.Based on differential type memristor ...
YANG Li-bo, ZHANG Xiao-yong, LIANG Wei-ze, Dept.of Computer Engineering, Taiyuan University, Key Laboratory of Instrumentation Science & Dynamic Measurement   +5 more
doaj  

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

RF Magnetron Sputtered Tungsten Disulfide Films: Influence of Target Preparation, Deposition Parameters, and Storage Conditions on Thin Film Stoichiometry

Advanced Materials Interfaces, EarlyView.
Sputtered WS2 films were investigated in terms of their S‐ and O‐concentration depending on deposition power and pre‐sputter time. Chemical and structural investigations were done using EDS, TEM, SEM, AFM, XRD. In general, 20 W films exhibit a wide variation in stoichiometry and structure whereas 80 W films demonstrate a higher S/W ratio than 20 W ...
Theresa Scheler, Pascal Illgner, Thomas Kups, Michaela Blum, Peter Schaaf   +4 more
wiley   +1 more source

On the fractional domain generalization of memristive parametric oscillators

Cogent Engineering, 2019
In this research, we generalize a family of electronic parametric oscillators in the fractional domain by using a state of the art circuit element namely fractional memristor. Such family of parametric oscillators is the memristor based Wien family which
Rawid Banchuin
doaj   +1 more source

PZT optical memristors

Nature Communications
Optical memristors represent a monumental leap in the fusion of photonics and electronics, heralding a new era of applications from neuromorphic computing to artificial intelligence. However, current technologies are hindered by complex fabrication, limited endurance, high optical loss or low modulation depth.
Chenlei Li, Hongyan Yu, Tao Shu, Yueyang Zhang, Chengfeng Wen, Hengzhen Cao, Jin Xie, Hanwen Li, Zixu Xu, Gong Zhang, Zejie Yu, Huan Li, Liu Liu, Yaocheng Shi, Feng Qiu, Daoxin Dai   +15 more
openaire   +2 more sources

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source