Results 81 to 90 of about 4,407 (266)
Advanced Science, EarlyView.Here, we present an optoelectronic synaptic memtransistor (OSMT) integrating photoresponsive IGZO with contact‐engineered HfO2, enabling electrically and optically tunable synaptic weights. The device demonstrates broad range of tunable conductance states and array‐level image processing, highlighting its potential for intelligent machine vision ...
Donghyun Kang +6 more
wiley +1 more source
Advanced Science, EarlyView.Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu +11 more
wiley +1 more source
On the fractional domain generalization of memristive parametric oscillators
Cogent Engineering, 2019 In this research, we generalize a family of electronic parametric oscillators in the fractional domain by using a state of the art circuit element namely fractional memristor. Such family of parametric oscillators is the memristor based Wien family which
Rawid Banchuin
doaj +1 more source
Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration
Advanced Science, EarlyView.This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang +6 more
wiley +1 more source
Polarization Engineering in Vinylene‐Linked COFs Toward Efficient Neuromorphic Computing
Advanced Science, EarlyView.A vinyl‐linked covalent organic framework (COF‐DIBPY) was synthesized on a conductive substrate for memristor applications. Redox reactions and bromide migration enable low‐voltage (0.5V) conductance switching with high analog on/off ratio (15.7). The device was further integrated into a speech emotion recognition system for acoustic simulation and ...
Hao Wang +5 more
wiley +1 more source
Advanced Science, EarlyView.A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee +5 more
wiley +1 more source
Advanced Science, EarlyView.An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
LinearandNonlinearModelsofHPTiO2MemristorandTheirPrintfingerAnalyses
工程科学与技术, 2014 :To analyze the printfingers of HP TiO2 memristor model and compare the differences between the printfingers of the basic model and nonlinear window function models, the features of several typical HP TiO2 memristor nonlinear window function models were ...
doaj
Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing
Advanced Science, EarlyView.A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh +7 more
wiley +1 more source
NbOx Mott Memristor‐Based Oscillatory P‐trit for Ternary Potts Machine
Advanced Science, EarlyView.A ternary Potts machine utilizing NbOx‐based probabilistic trits (p‐trits) is demonstrated for efficient combinatorial optimization. By leveraging the electro‐thermal switching dynamics of NbOx memristors, this architecture generates three‐state stochastic fluctuations.
Hakseung Rhee +10 more
wiley +1 more source