Results 81 to 90 of about 14,306 (300)

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Hybrid Dislocated Control and General Hybrid Projective Dislocated Synchronization for Memristor Chaotic Oscillator System

Advances in Mathematical Physics, 2014
Some important dynamical properties of the memristor chaotic oscillator system have been studied in the paper. A novel hybrid dislocated control method and a general hybrid projective dislocated synchronization scheme have been realized for memristor ...
Junwei Sun, Chun Huang, Guangzhao Cui
doaj   +1 more source

Memristor models for pattern recognition systems

, 2012
The design of Memristor Oscillatory Neurocomputers for pattern recognition tasks may not leave aside a preliminary thorough investigation of the nonlinear dynamics of the whole system and its basic components.
Alon Ascoli, Corinto, Fernando, Fernando Corinto, Marco Gilli, Ascoli, Alon, Gilli, Marco   +5 more
core   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source

Fractional Order Memristor No Equilibrium Chaotic System with Its Adaptive Sliding Mode Synchronization and Genetically Optimized Fractional Order PID Synchronization

Complexity, 2017
This paper introduces a fractional order memristor no equilibrium (FOMNE) chaotic system and investigates its adaptive sliding mode synchronization. Firstly the dynamic properties of the integer order memristor no equilibrium system are analyzed.
Karthikeyan Rajagopal, Laarem Guessas, Anitha Karthikeyan, Ashokkumar Srinivasan, Girma Adam   +4 more
doaj   +1 more source

Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health

Advanced Materials, EarlyView.
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim, Seungwon Yoo, Tae Woog Kang, Yunuo Huang, Woon‐Hong Yeo   +4 more
wiley   +1 more source

Effects of Parasitic Fractional Elements to the Dynamics of Memristor

Journal of Electrical and Computer Engineering, 2019
In this research, we study the effects of the parasitic fractional elements to the dynamic of the memristor where both flux- and charge-controlled memristors have been considered. For doing so, the fractional differential equation-based approach has been
Rawid Banchuin
doaj   +1 more source

Compensating Circuit to Reduce the Impact of Wire Resistance in a Memristor Crossbar-Based Perceptron Neural Network

Micromachines, 2019
Wire resistance in metal wire is one of the factors that degrade the performance of memristor crossbar circuits. In this paper, an analysis of the impact of wire resistance in a memristor crossbar is performed and a compensating circuit is proposed to ...
Son Ngoc Truong
doaj   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

Advanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu, Junjie Zhao, Richard Schroedter, Jason Vincent, Hampus Hoffman, Leif Riemenschneider, Abdallh Herbawe, Hao Shen, Ronald Tetzlaff, Stefan Slesazeck, Gianaurelio Cuniberti, Thomas Mikolajick, Benjamin Max   +12 more
wiley   +1 more source