Results 101 to 110 of about 50,856 (266)

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

Advanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo, Junsung Byeon, Jungmoon Lim, Sohyeon Park, Sungsan Kang, Byeongchan Kim, Gyuhwi Jeong, Haerim Kim, Bongjun Kim, SeungNam Cha, Sangyeon Pak   +10 more
wiley   +1 more source

Nanoscale structuring of tungsten tip yields most coherent electron point-source

, 2013
This report demonstrates the most spatially-coherent electron source ever reported. A coherence angle of 14.3 +/- 0.5 degrees was measured, indicating a virtual source size of 1.7 +/-0.6 Angstrom using an extraction voltage of 89.5 V.
A Peter Legg, Barwick B, Chang C, Fink H, Hasselbach F, Hwang I-S, Jason Pitters, Josh Y Mutus, Lichte H, Lucian Livadaru, Mark H Salomons, Martin Cloutier, Mutus J, Oshima C, Prigent M, Radovan Urban, Robert A Wolkow   +16 more
core   +1 more source

Ultrastable Photoactive Halide Perovskite Nanocrystal‐Sensitized SnO2 Nanorods for Room‐Temperature NO2 Detection

Advanced Functional Materials, EarlyView.
ABSTRACT Metal oxide (MOx)‐based NO2 gas sensors typically require high temperatures or ultraviolet light, limiting their practical use. To enable visible‐light activation at room temperature, efficient and stable photosensitizers should be integrated with nanostructured MOx hosts.
Yeonji Yuk, Dokyum Kim, Jun‐Cheol Park, Yoonsung Jung, Inhyeok Oh, Donghyeon Lee, Yejoon Kim, Ji‐Eun Yeo, Young Min Song, Chang‐Lyoul Lee, Sanghan Lee   +10 more
wiley   +1 more source

Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

AIP Advances, 2014
The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were
Yangyang Qi, Zhen Wang, Mingliang Zhang, Xiaodong Wang, An Ji, Fuhua Yang   +5 more
doaj   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

Advanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda, Thor Hvid‐Olsen, Christina Hoegfeldt, Anshu Gupta, Alessandro Palliotto, Fardin Ghaffari‐Tabrizi, Maja A. Dunstan, Kasper S. Pedersen, Dae‐Sung Park, Damon J. Carrad, Thomas Sand Jespersen, Felix Trier   +11 more
wiley   +1 more source

Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates

Scientific Reports, 2017
Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE).
Chia-Yun Chen, Ta-Cheng Wei, Cheng-Ting Lin, Jheng-Yi Li   +3 more
doaj   +1 more source

Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration. [PDF]

Materials (Basel), 2023
Huang W, Wu J, Li W, Chen G, Chu C, Li C, Zhu Y, Yang H, Chao Y.   +8 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

Beilstein Journal of Nanotechnology, 2020
The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically ...
Mathias Franz, Romy Junghans, Paul Schmitt, Adriana Szeghalmi, Stefan E. Schulz   +4 more
doaj   +1 more source

Gourd‐Inspired Design of Unit Cell with Multiple Gradients for Physiological‐Range Pressure Sensing

Advanced Functional Materials, EarlyView.
Gourd‐shaped micro‐dome arrays with coordinated modulus, conductivity, and geometric gradients co‐optimize sensitivity and linearity in piezoresistive tactile sensors. Under pressure, a solid upper dome embeds into a porous lower dome, triggering rapid contact‐area growth and series‐to‐parallel conduction, enabling unsaturated, intensity‐resolved ...
Jiayi Xu, Ming Lei, Yuanzhe Liang, Biao Qi, Ziyi Dai, Yong Zhao, Bingpu Zhou   +6 more
wiley   +1 more source