Results 71 to 80 of about 11,906 (259)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

The metal-insulator transition: A perspective

, 1998
The metal-insulator transition, a quantum phase transition signifying the natural transformation of a metallic conductor to an insulator, continues to be the focus of intense inquiry and debate. The first discussion of the heuristic differences between metals and insulators, and implicitly the critical conditions for the transition between these ...
Edwards, PP, Johnston, RL, Rao, CNR, Tunstall, DP, Hensel, F   +4 more
openaire   +2 more sources

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

Advanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li, Changshun Dai, He Qi, Jiecheng Liu, Xiaoming Shi, Heng Zhou, Qiong Yang, Mingsheng Long, Lei Shan, Chunchang Wang, Jianli Wang, Zhenxiang Cheng   +11 more
wiley   +1 more source

Microscopic description of insulator-metal transition in high-pressure oxygen

Scientific Reports, 2017
Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions.
Luis Craco, Mukul S. Laad, Stefano Leoni
doaj   +1 more source

Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature

Advanced Functional Materials, EarlyView.
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón, Maksim Lednev, Jorge Cuadra, Raúl Gago, Luis Viña, Francisco José García Vidal, Johannes Feist, Ferry Prins, Carlos Antón Solanas   +8 more
wiley   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Regular-triangle trimer and charge order preserving the Anderson condition in the pyrochlore structure of CsW2O6

Nature Communications, 2020
Many rules have been suggested to rationalize the behaviour of transition metal oxides but the complex underlying physics often leads to deviations from the expected behaviour. Here the authors show that the metal-insulator transition in CsW2O6 satisfies
Yoshihiko Okamoto, Haruki Amano, Naoyuki Katayama, Hiroshi Sawa, Kenta Niki, Rikuto Mitoka, Hisatomo Harima, Takumi Hasegawa, Norio Ogita, Yu Tanaka, Masashi Takigawa, Yasunori Yokoyama, Kanji Takehana, Yasutaka Imanaka, Yuto Nakamura, Hideo Kishida, Koshi Takenaka   +16 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Quantum criticality at the metal-insulator transition [PDF]

Physical Review B, 2001
We introduce a new method to analysis the many-body problem with disorder. The method is an extension of the real space renormalization group based on the operator product expansion. We consider the problem in the presence of interaction, large elastic mean free path, and finite temperatures.
openaire   +2 more sources