Results 211 to 220 of about 251,389 (313)

Wastewater Treatment: Functional Materials and Advanced Technology, 2nd Edition. [PDF]

Molecules
Bi J.
europepmc   +1 more source

Exploring the Potential of Zero‐Dimensional Carbon Nanomaterials in Photoluminescent, Electrochemiluminescent and Electrochemical Sensors

Advanced Materials Interfaces, EarlyView.
Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins, Jeferson Luiz Gogola, Ava Gevaerd, Cristiane Kalinke, Paulo Roberto de Oliveira, Fabio Roberto Caetano, Bruno Campos Janegitz, Márcio Fernando Bergamini, Luiz Humberto Marcolino‐Junior   +8 more
wiley   +1 more source

Fascinating Frontier, Nanoarchitectonics, as Method for Everything in Materials Science. [PDF]

Materials (Basel)
Ariga K.
europepmc   +1 more source

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

Advanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner, Hubert N. Elly, Kaifan Yue, Cyra Moobed, Siddharth Kurup, Daniel Aziz, Kira L. Barton, Victor Breedveld, Eric M. Vogel, Michael A. Filler   +9 more
wiley   +1 more source

Research Progress and Application Prospects of Gel Electrolytes. [PDF]

Gels
Zille A, Ribeiro AI.
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Structure and optical properties of a trimetallic cobalt-molybdenum-sodium metal-organic framework. [PDF]

Acta Crystallogr C Struct Chem
Moore BJ, Tidey JP, Hiley CI, Walton RI.
europepmc   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source

Non-redox Lewis Acids Supported Pd-Catalyzed C-C /C-H Activation and Accession to Produce Pharmaceutical Intermediates. [PDF]

ChemistryOpen
Senan AM, Akkoc S, Abdulkarem AM, Alhag SK.   +3 more
europepmc   +1 more source