Results 271 to 280 of about 4,878,195 (347)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Research potential and mechanism of rare earth elements promoting cadmium remediation efficiency in hyperaccumulator plants. [PDF]

Front Plant Sci
Shi A, Yang W, Wang B, Zhang W.
europepmc   +1 more source

Protective Effect of PEG-EDTA and Its Zinc(II) Complex on Human Cells. [PDF]

Int J Mol Sci
Dhaliwal T, Babcock C, Degenhardt B, Osorio Passos I, Stepanyan T, Golizeh M.   +5 more
europepmc   +1 more source

A predictive descriptor for the d-band center in intermetallic alloys accelerates the design of robust molecular switches. [PDF]

Chem Sci
Yang S, Zhou J, Zhang Y, Cao G, Ren JC, Liu W.   +5 more
europepmc   +1 more source

Prevalence, risk factors and knowledge of noise-induced hearing loss among metal fabricators in Mbarara city, Uganda: a cross-sectional study. [PDF]

BMJ Public Health
Agaba B, Nakku D, Nakasagga E, Atwine D.
europepmc   +1 more source

Inorganic Interface Engineering for Stabilizing Zn Metal Anode. [PDF]

Nanomicro Lett
Yuan S, Zhao W, Song Z, Lin H, Zhao X, Feng Z, Xu ZJ, Fan H, Zou Q.   +8 more
europepmc   +1 more source

Innovative Strategies to Overcome Stability Challenges of Single-Atom Nanozymes. [PDF]

Nanomicro Lett
Guo R, Du Q, He Y, Wu H, Zhang Y, Jing Z.   +5 more
europepmc   +1 more source

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Metal–Insulator–Metal Transistors

Advanced Materials, 2008
A metal–insulator–metal field‐effect transistor has been fabricated. The device performance was achieved by reducing the density of states by only partially covering the substrate, which increases the relative field effect. An infinite on–off ratio, no lower limit to device dimensions, a generally enhanced flexibility in design, and low production ...
Xiang, HF, Xu, ZX, Stallinga, P, Roy, VAL, Che, CM   +4 more
openaire   +3 more sources