Results 101 to 110 of about 5,881 (252)
Advanced Science, EarlyView.Bismuth telluride‐based alloys are benchmark thermoelectric materials for near‐room‐temperature applications. Here, SnSe‐induced interfacial reconstruction simultaneously optimizes carrier and phonon transport in Bi0.4Sb1.6Te3, achieving a peak ZT of ∼1.38 at 363 K and a device efficiency of ∼6.47%, providing an effective strategy for high‐performance ...
Wenyi Chen +11 more
wiley +1 more source
Recent Advances of Transition Metal Chalcogenides as Cathode Materials for Aqueous Zinc-Ion Batteries. [PDF]
Nanomaterials (Basel), 2022 Liu Y, Wu X.
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Recent Advances in Programmable Metasurfaces and Meta‐Devices
Advanced Electronic Materials, EarlyView.Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao +4 more
wiley +1 more source
Solvent-controlled ion-coupled charge transport in microporous metal chalcogenides. [PDF]
Chem Sci, 2022 McKenzie J, Kempler PA, Brozek CK.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen +9 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A one‐pot solvothermal reaction yields Bi2Te3 nanoplate/Te nanorod composites, in which the antimony precursor regulates crystallite size without lattice incorporation. Drop‐cast flexible films reach Seebeck coefficients of −127 and 323 µV K−1 at 393 K, and a flexible thermoelectric generator produces 6.2 mV at a temperature difference of 5.6 K ...
Keisuke Kaneko +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A GeTe‐Sb2Te3 composition spread is fabricated using RF magnetron co‐sputtering. Increasing Sb content stabilized the high‐performance cubic GeTe phase. The composition 5Sb3₇Te5₈ exhibited the highest thermoelectric performance, achieving a power factor of ∼1 mW m−1 K−2 and a maximum zT of 0.81 at 300°C.
Nur Qalishah Adanan +9 more
wiley +1 more source
Activation of anionic redox in d0 transition metal chalcogenides by anion doping. [PDF]
Nat Commun, 2021 Leube BT +11 more
europepmc +1 more source
Advancing Energy Materials by In Situ Atomic Scale Methods
Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source