Results 31 to 40 of about 49,334 (299)

Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology

Advanced Engineering Materials, EarlyView.
We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham, Chenyu Wen, Mohammad Hadi Khaksaran, Won‐Yong Lee, Javier Cruz, Klas Hjort, Dongping Wu, Shi‐Li Zhang   +7 more
wiley   +1 more source

A Highly Robust Integrated Gate Driver Based on Organic TFTs for Active-Matrix Displays

IEEE Journal of the Electron Devices Society
A highly robust integrated gate driver based on organic thin-film transistors (OTFTs) is proposed that effectively addresses the output degradation caused by depletion-mode operation, instability and variation.
Wanming Wu, Chuanke Chen, Chunyu Zhang, Chen Gu, Yinzhi Tang, Shipeng Wang, Mengwen Yan, Qingding Tong, Di Geng, Ling Li   +9 more
doaj   +1 more source

Assessment of lithographic process variation effects in InGaAsP annular Bragg resonator lasers [PDF]

, 2004
Optical microresonators based on an annular geometry of radial Bragg reflectors have been designed and fabricated by electron-beam lithography, reactive ion etching, and an epitaxial transfer process. Unlike conventional ring resonators that are based on
DeRose, Guy A., Green, William M. J., Scherer, Axel, Scheuer, Jacob, Yariv, Amnon   +4 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Deep reinforcement learning for job scheduling on load-aware heterogeneous cluster

Journal of Big Data
In cluster computing, job scheduling enhances resource utilization and operational efficiency based on user requirements. Scheduling systems utilizing deep reinforcement learning have proven effective in simple scenarios, such as homogeneous clusters and
Zhenjie Yao, Li Ding, He Zhang, Huiqiang Li, Lan Chen, Zhiqiang Li   +5 more
doaj   +1 more source

Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

Nano-Micro Letters, 2021
Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor ...
Kun Liang, Dingwei Li, Huihui Ren, Momo Zhao, Hong Wang, Mengfan Ding, Guangwei Xu, Xiaolong Zhao, Shibing Long, Siyuan Zhu, Pei Sheng, Wenbin Li, Xiao Lin, Bowen Zhu   +13 more
doaj   +1 more source

Microelectronic Precision Optical Element Fabrication [PDF]

, 2009
Abstract : The DARPA program involved investigating the assembly of 3-dimensional optoelectronic/microelectronic components with optical precision. A three-active-facet retromodulator with multiple quantum well modulators on the three faces of a comer cube was constructed.
openaire   +1 more source

Mechanical analysis of encapsulated metal interconnects under transversal load [PDF]

, 2014
Novel insights regarding the ability of encapsulated metal interconnections to deform due to bending are presented. Encapsulated metal interconnections are used as electric conductor or measurement system within a wide range of applications fields, e.g ...
Bossuyt, Frederick, De Baets, Johan, Gonzalez, Mario, Van Keymeulen, Bjorn, Vanfleteren, Jan   +4 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source