Results 171 to 180 of about 3,408,458 (372)

Photoswitching Conduction in Framework Materials

open access: yesAdvanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez   +4 more
wiley   +1 more source

Microstructure evolution in MA956 neutron irradiated in ATR at 328 °C to 4.36 dpa

open access: green, 2020
Zhexian Zhang   +3 more
openalex   +2 more sources

Anisotropic Shear Properties of Organic Interfaces in Bio‐composite Materials

open access: yesAdvanced Functional Materials, EarlyView.
A novel cantilever design enables direct probing of shear properties at single organic interfaces within biocomposite prismatic ultrastructures. By decoupling lateral and torsional shear responses, the method reveals isotropic behavior in Atrina vexillum and pronounced anisotropy in Unio pictorum.
Kian Tadayon   +2 more
wiley   +1 more source

Tunable Coordination Number in Non‐Metal‐Introduced Copper Catalysts Enables High‐Performance Electrochemical CO2 Reduction to C2 Products

open access: yesAdvanced Functional Materials, EarlyView.
Copper catalysts introduced with different non‐metallic elements regulating the coordination number of Cu are prepared by magnetron sputtering. Reducing the Cu coordination number enhances C─C coupling and boosts C2+ product selectivity, by lowering the energy barrier for the *CO → *CHO conversion step. The optimized Si‐doped Cu catalyst achieves a C2+
Xiaoye Du   +8 more
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu   +12 more
wiley   +1 more source

Home - About - Disclaimer - Privacy