Results 1 to 10 of about 13,356 (166)
Entangled Frequency-Tunable Microwave Photons in a Superconducting Circuit
Applied Sciences (Switzerland), 2023 We propose a frequency-tunable source to emit entangled microwave photons on the platform of a superconducting circuit, in which two superconducting transmission-line resonators are coupled via a capacitor and one resonator is inserted with a ...
Guozhu Sun, Huabing Wang, Peiheng Wu
exaly +3 more sources
A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode
IEEE Photonics Journal, 2023 This paper presents a CMOS-integrated linear-mode avalanche photodiode based on electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide absorption zone. The EFLC-APD possesses a hemispherical avalanching electric field
Seyed Saman Kohneh Poushi +5 more
doaj +1 more source
VLC Using 800-μm Diameter APD Receiver Integrated in Standard 0.35-μm BiCMOS Technology
IEEE Photonics Journal, 2021 The fully integrated 800 μm. diameter avalanche photodiode optical receiver is implemented in 0.35 μm BiCMOS technology without any process modifications.
D. Milovancev +5 more
doaj +1 more source
Direct-Sequence-CDMA in Highly Sensitive Indirect Time-of-Flight Distance Sensor
IEEE Photonics Journal, 2023 This work presents the application of Direct-Sequence Code-Division-Multiple-Access (DS-CDMA) to tackle the primary problem of simultaneous multi-access of a shared light channel in an indirect Time-of-Flight measurement system based on on-off-keyed (OOK)
Fabio Schartmuller +4 more
doaj +1 more source
Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology
Sensors, 2023 This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring.
Seyed Saman Kohneh Poushi +4 more
doaj +1 more source
Sensors, 2023 The purpose of this work is to prove the suitability of integrated single-photon avalanche diode (SPAD)-based indirect time-of-flight (iTOF) for sub-100 µm precision depth sensing using a correlation approach with GHz modulation frequencies.
Michael Hauser +2 more
doaj +1 more source
Graphene‐Based Microwave Circuits: A Review [PDF]
Advanced Materials, 2022 AbstractOver the past two decades, research on 2D materials has received much interest. Graphene is the most promising candidate regarding high‐frequency applications thus far due to is high carrier mobility. Here, the research about the employment of graphene in micro‐ and millimeter‐wave circuits is reviewed.
Mohamed Saeed +11 more
openaire +4 more sources
IEEE Photonics Journal, 2022 This work describes the architecture and measured capabilities of an optical distance sensing application specific integrated circuit (ASIC) manufactured in 0.35 μm CMOS with a nominal supply voltage of 3.3 V for indirect time-of-flight.
Alexander Kuttner +3 more
doaj +1 more source
Noise and Breakdown Characterization of SPAD Detectors with Time-Gated Photon-Counting Operation
Sensors, 2021 Being ready-to-detect over a certain portion of time makes the time-gated single-photon avalanche diode (SPAD) an attractive candidate for low-noise photon-counting applications. A careful SPAD noise and performance characterization, however, is critical
Hiwa Mahmoudi +3 more
doaj +1 more source
Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS
IEEE Photonics Journal, 2022 Fast active quenching of single-photon avalanche diodes (SPADs) is important to reduce the afterpulsing probability (APP). An option to reduce the reaction time of electronics to a SPAD's avalanche is to design a quencher exploiting bipolar ...
Bernhard Goll +2 more
doaj +1 more source