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EM-Based Optimization of Microwave Circuits Using Artificial Neural Networks: The State-of-the-Art
IEEE Transactions on Microwave Theory and Techniques, 2004 This paper reviews the current state-of-the-art in electromagnetic (EM)-based design and optimization of microwave circuits using artificial neural networks (ANNs). Measurement-based design of microwave circuits using ANNs is also reviewed.
J E Rayas-Sánchez
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GaAs Integrated Microwave Circuits
IEEE Transactions on Microwave Theory and Techniques, 1968GaAs has many desirable features that make it most useful for microwave and millimeter-wave integrated circuits.The process of selective epitaxial depositions of high purity single-crystal GaAs with various doping concentrations into semi-insulating GaAs substrates has been developed.
E.W. Mehal, R.W. Wacker
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IRE Transactions on Electronic Computers, 1959
In a carrier-type digital computer system, binary information can be represented by the presence or absence of an RF pulse in a given time interval. Using strip-line printed circuit techniques and point-contact diodes, passive AND and NOT gates were constructed which operate with RF pulses of less than 2 m?sec duration (i.e., an effective pulse ...
Donald J. Blattner, Fred Sterzer
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In a carrier-type digital computer system, binary information can be represented by the presence or absence of an RF pulse in a given time interval. Using strip-line printed circuit techniques and point-contact diodes, passive AND and NOT gates were constructed which operate with RF pulses of less than 2 m?sec duration (i.e., an effective pulse ...
Donald J. Blattner, Fred Sterzer
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Microwave bistability in circuit QED
2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology, 2011Recent experiments have realized a familiar model of quantum optics, dispersive optical bistability, in the context of microwave coplanar resonators with internal Josephson junctions that are used to achieve large effective Kerr nonlinearities with very low dissipation.
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Microwave CMOS-devices and circuits
Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143), 2002In this paper we discuss the design of front end CMOS RF circuits using microwave concepts. The focus of this paper is directed towards understanding the microwave properties of CMOS devices in relation to designing microwave circuits. The concepts within this paper will be emphasized through pertinent examples drawn from the RF research activities at ...
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Microelectronics Reliability, 1981
The development of the use of gallium arsenide as a material for building integrated circuits has made possible the production of high-frequency devices operating in the microwave range.
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The development of the use of gallium arsenide as a material for building integrated circuits has made possible the production of high-frequency devices operating in the microwave range.
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2018
This chapter describes detailed transmission line theory and analysis including concept of S-parameters, ABCD parameters and their interrelationships through various examples. It gives Smith chart analysis and describes various transmission lines like waveguide, coaxial, stripline, microstrip and coplanar transmission lines.
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This chapter describes detailed transmission line theory and analysis including concept of S-parameters, ABCD parameters and their interrelationships through various examples. It gives Smith chart analysis and describes various transmission lines like waveguide, coaxial, stripline, microstrip and coplanar transmission lines.
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Journal of the Physical Society of Japan, 1952
The electric current \(\dot{I}\) and the volage \(\dot{V}\) on the imagined surface S are defined by \(\dot{I}\textbf{\itshape F}=\textbf{\itshape H}^{t}\), \(\dot{P}=\dot{V}\tilde{I}\) or \(\dot{I}\textbf{\itshape F}=\textbf{\itshape E}\), \(\tilde{P}=\dot{V}\tilde{I}\), where H t , E t are tangential magnetic and electric field components on S , and ...
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The electric current \(\dot{I}\) and the volage \(\dot{V}\) on the imagined surface S are defined by \(\dot{I}\textbf{\itshape F}=\textbf{\itshape H}^{t}\), \(\dot{P}=\dot{V}\tilde{I}\) or \(\dot{I}\textbf{\itshape F}=\textbf{\itshape E}\), \(\tilde{P}=\dot{V}\tilde{I}\), where H t , E t are tangential magnetic and electric field components on S , and ...
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