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A generation of microwave ferrite devices
Proceedings of the IEEE, 1988The development of microwave ferrite materials and devices over the last thirty years is traced. The status of materials, devices, and theoretical understanding prevalent in the mid-1950s is first reviewed. Developments in materials engineering of garnets and lithium ferrites in the 1960s and 1970s are described, along with the evolution of circulators
G P Rodrigue
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Multiferroic Based Microwave Devices
Advanced Materials Proceedings, 2016Recently, there has been significant interest on the fundamental science and technological applications of complex oxides and multiferroics. Low-power multiferroic have potential to fabricate and characterize frequency tunable, compatible with MMIC Technology, small light-weight for hand-held operation, cost-effective, high-frequency (>10GHz), devices ...
Vinay Sharma +2 more
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Microwave Magnetic Film Devices
2000Publisher Summary This chapter discusses the applications of magnetic films in microwave devices. Magnetic film microwave devices are based on a broad class of ferrimagnetic materials commonly referred to as “ferrites.” Both ferro- and ferrimagnetic materials exhibit the hysteresis effect, which is a nonlinear relationship between the applied ...
Douglas B. Chrisey +3 more
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Microwave CMOS-devices and circuits
Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143), 2002In this paper we discuss the design of front end CMOS RF circuits using microwave concepts. The focus of this paper is directed towards understanding the microwave properties of CMOS devices in relation to designing microwave circuits. The concepts within this paper will be emphasized through pertinent examples drawn from the RF research activities at ...
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Optically controlled microwave devices
International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153), 2002In this paper, a review is given of recent advances in optically controlled microwave and millimeter wave devices and circuits. Special emphasis will firstly be laid on the physical background of optical effects in semiconductor materials and structures.
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Journal of Physics E: Scientific Instruments, 1974
Avalanche diodes are finding an increasing number of applications as sources of microwave power in the frequency rane 1-100 GHz. There are two basic modes of operation; the IMPATT mode in which the diode behaves as a negative conductance in a resonant circuit, and the TRAPATT mode in which the diode acts as a fast switch which periodically discharges ...
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Avalanche diodes are finding an increasing number of applications as sources of microwave power in the frequency rane 1-100 GHz. There are two basic modes of operation; the IMPATT mode in which the diode behaves as a negative conductance in a resonant circuit, and the TRAPATT mode in which the diode acts as a fast switch which periodically discharges ...
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Relativistic Microwave Devices
2018Relativistic microwave devices are a large group of generators and amplifiers of microwave radiation in which the relativistic effects are noticeably manifested: the dependence of the electron mass on energy as well as the normal and anomalous Doppler effects. Pecualarities of elecron-field interaction in relativistic devices are considered, main types
Andrey D. Grigoriev +2 more
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Microwave Semiconductor Devices
Physics Bulletin, 1971H V Shurmer London: Pitman 1971 pp xi + 223 price £2.25 This book is written primarily for the undergraduate and provides a comprehensive account of the various microwave semiconductor devices of interest in the field of microwave engineering.
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