Results 81 to 90 of about 59,187 (301)

Highly Sensitive Electrochemical Biosensor Based on Hairy Particles with Controllable High Enzyme Loading and Activity

open access: yesAdvanced Functional Materials, EarlyView.
For the first time, a highly sensitive electrochemical biosensor based on SiO2‐based hairy particles with a grafted PDMAEMA polymer brush containing a quantifiable and large amount of immobilized Laccase is reported. The fabricated biosensor exhibits a sensitivity of 0.14 A·m⁻¹, a limit of detection (LOD) of 0.1 µm, and a detection range of 0.3–750 µm,
Pavel Milkin   +7 more
wiley   +1 more source

Hybrid Millimeter-Wave Systems: A Novel Paradigm for HetNets

open access: yes, 2015
Heterogeneous Networks (HetNets) are known to enhance the bandwidth efficiency and throughput of wireless networks by more effectively utilizing the network resources.
Hua, Yingbo   +4 more
core   +1 more source

Positive‐Tone Nanolithography of Antimony Trisulfide with Femtosecond Laser Wet‐Etching

open access: yesAdvanced Functional Materials, EarlyView.
A butyldithiocarbamic acid (BDCA) etchant is used to fabricate various micro‐ and nanoscale structures on amorphous antimony trisulfide (a‐Sb2S3) thin film via femtosecond laser etching. Numerical analysis and experimental results elucidate the patterning mechanism on gold (reflective) and quartz (transmissive) substrates.
Abhrodeep Dey   +12 more
wiley   +1 more source

Decoupling Size and Electronic Effects in Doped SrTiO3 Photocatalysts Through Surface Area–Normalized CO2 Hydrogenation Rates

open access: yesAdvanced Functional Materials, EarlyView.
Exploring the photocatalytic reverse water–gas shift (RWGS) reaction on doped SrTiO3 nanoparticle films, reveals that normalizing catalytic rates by the catalyst's specific surface area (SSA) disentangled surface area effects from the catalyst's intrinsic material properties.
Dikshita Bhattacharyya   +6 more
wiley   +1 more source

Semiconductor Devices for Millimeter-Wave Repeaters

open access: yesThe Journal of the Institute of Television Engineers of Japan, 1972
主として電電公社通研で行なわれてきたミリメートル波ダイオードの研究結果につき述べた.40~80GHz帯を使用する実用的なミリ波伝送方式に必要とされる送受信周波数変換器, 周波数逓倍器にはGaAsを用いたショットキーバリヤダイオードおよび拡散ダイオードが良好な性能をもって使用されうる見通しがついた.ミリ波直接発振源としてのインパットダイオードについても, 実験室的には漸次方式実験に供しうるものが得られつつある.
openaire   +2 more sources

Device-to-Device Communications in the Millimeter Wave Band: A Novel Distributed Mechanism

open access: yes, 2018
In spite of its potential advantages, the large-scale implementation of the device-to-device (D2D) communications has yet to be realized, mainly due to severe interference and lack of enough bandwidth in the microwave ($\mu$W) band.
Bahadori, Niloofar   +3 more
core   +1 more source

Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies [PDF]

open access: yes, 2004
In this paper, we review a range of nanofabrication techniques which enable the realization of uniform, high yield, high performance 50 nm T-gate III-V high electron mobility transistors (HEMTs). These technologies have been applied in the fabrication of
Boyd, E.   +8 more
core   +1 more source

Electroactive Metal–Organic Frameworks for Electrocatalysis

open access: yesAdvanced Functional Materials, EarlyView.
Electrocatalysis is crucial in sustainable energy conversion as it enables efficient chemical transformations. The review discusses how metal–organic frameworks can revolutionize this field by offering tailorable structures and active site tunability, enabling efficient and selective electrocatalytic processes.
Irena Senkovska   +7 more
wiley   +1 more source

Mechanical Properties of Architected Polymer Lattice Materials: A Comparative Study of Additive Manufacturing and CAD Using FEM and µ‐CT

open access: yesAdvanced Functional Materials, EarlyView.
This study examines how pore shape and manufacturing‐induced deviations affect the mechanical properties of 3D‐printed lattice materials with constant porosity. Combining µ‐CT analysis, FEM, and compression testing, the authors show that structural imperfections reduce stiffness and strength, while bulk material inhomogeneities probably enhance ...
Oliver Walker   +5 more
wiley   +1 more source

50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node [PDF]

open access: yes, 2006
Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date.
Elgaid, K.   +5 more
core   +1 more source

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