Results 211 to 220 of about 47,371 (312)

Enhancing Ga─Sb Bonds by GaSb Co‐Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory

open access: yesAdvanced Electronic Materials, EarlyView.
This study reveals that GaSb co‐doping in Ge₂Sb₂Te₅ significantly mitigates unwanted Ga─Ge bonds, achieving an impressive 8 ns phase change speed and enhanced thermal stability up to 196 °C. First‐principles simulations and experimental characterizations demonstrate stable multilevel resistance, paving the way for advanced phase change memory in ...
Ke Gao   +5 more
wiley   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

High-energy emission from millisecond pulsars: polar cap models [PDF]

open access: bronze, 2000
Qinghuan Luo   +2 more
openalex   +1 more source

Dynamic Defect Tolerance in Metal Halide Perovskites: From Phenomena to Mechanism

open access: yesAdvanced Energy Materials, EarlyView.
Defect tolerance is the key feature that dominates the high performance of perovskite devices. MHPs exhibit dynamic defect tolerance at practical working condition, which is intrinsically relevant to their soft‐lattice thus mixed ionic‐electronic conduction, and intimately correlated with charge carrier, phonon, lattice, and mobile ions and determine ...
Guangsheng Liu   +5 more
wiley   +1 more source

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