Results 81 to 90 of about 24,186 (294)

Semiconducting THO‐C3N Monolayers for Ultrahigh Anisotropic Carrier Mobility

open access: yesAdvanced Science, EarlyView.
A precise site‐specific N‐doping strategy that drives a secondary electronic transition in net W is proposed, enabling the electronic properties transition from metal to Dirac semimetal and ultimately to semiconductor. The obtained THO‐C3N‐2 and THO‐C3N‐3 semiconductors exhibit high carrier mobilities and pronounced mobility anisotropy, with THO‐C3N‐2 ...
Rui Tan   +7 more
wiley   +1 more source

Lower bounds of the minimum eigenvalue for $M$-matrices

open access: yes, 2017
Some monotone increasing sequences of the lower bounds for the minimum eigenvalue of $M$-matrices are given. It is proved that these sequences are convergent and improve some existing results. Numerical examples show that these sequences are more accurate than some existing results and could reach the true value of the minimum eigenvalue in some cases.
Zhao, Jianxing, Sang, Caili
openaire   +2 more sources

Scrambling‐Enhanced Quantum Battery Charging in Black Hole Analogues

open access: yesAdvanced Science, EarlyView.
By employing a black‐hole‐analog quantum battery constructed from a position‐dependent XY model, its dynamical behavior is investigated through a quench of the scrambling parameter. It is systematically quantified that how the simulated scrambling improves key performance metrics‐namely, stored energy, peak power, and charging time‐thereby offering a ...
Zhilong Liu   +3 more
wiley   +1 more source

Performance of Cooperative Eigenvalue Spectrum Sensing with a Realistic Receiver Model under Impulsive Noise

open access: yesJournal of Sensor and Actuator Networks, 2013
In this paper we present a unified comparison of the performance of four detection techniques for centralized data-fusion cooperative spectrum sensing in cognitive radio networks under impulsive noise, namely, the eigenvalue-based generalized likelihood ...
Dayan A. Guimarães   +2 more
doaj   +1 more source

Phase‐Engineered Non‐Degenerate Sliding Ferroelectricity Enables Tunable Photovoltaics in Monolayer Janus In2S2Se

open access: yesAdvanced Science, EarlyView.
The meticulously phase‐engineered non‐degenerate sliding ferroelectricities in monolayer In2S2Se, along with their tunable impacts on photovoltaic performances, introduce innovative perspectives for the future design and optimization of 2D advanced photovoltaic devices.
Yixuan Li   +9 more
wiley   +1 more source

Some inequalities for the Fan product of M-tensors

open access: yesJournal of Inequalities and Applications, 2018
In this paper, we investigate some inequalities for the Fan product of M-tensors. We propose exact characterizations of M-tensors and establish some inequalities on the minimum eigenvalue for the Fan product of two M-tensors.
Gang Wang, Yanan Wang, Yuan Zhang
doaj   +1 more source

Simultaneously Achieving Efficient Narrow‐Band Emission and Large Emission Dissymmetry Factor in an Achiral Hybrid Indium Chloride

open access: yesAdvanced Science, EarlyView.
This work demonstrates that efficient CPL, characterized by high PLQY, large glum, and narrow‐band emission, can be achieved simultaneously in a ligand‐modified hybrid indium chloride crystallizing in an achiral space group. ABSTRACT To achieve high contrast in three‐dimensional display, circularly polarized luminescence (CPL) materials should ...
Haowei Lin   +8 more
wiley   +1 more source

Thermally Programmable Two‐Port Non‐Hermitian Acoustic Metastructure for Broadband and Direction‐Dependent Absorption

open access: yesAdvanced Science, EarlyView.
A thermally programmable two‐port non‐Hermitian acoustic metastructure is presented, where temperature acts as a non‐geometric tuning variable. Thermal modulation reconfigures impedance matching and loss‐leakage coupling, enabling exceptional‐point driven, broadband, and direction‐dependent sound absorption without requiring geometric reconfiguration ...
Zichao Guo   +6 more
wiley   +1 more source

MIM‐Diode‐Like Rectification in Lateral 1T/1H/1T‐MoS2 Homojunctions via Interfacial Dipole Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
The metallic 1T and semiconducting 1H phases of MoS2 enable phase‐engineered 1T/1H/1T homojunctions that exhibit MIM‐diode‐like rectification without dissimilar electrodes. Asymmetric 1T/1H interfaces induce interface dipoles and a built‐in potential drop across the 1H barrier, creating a trapezoidal tunnel barrier at zero bias and yielding diode‐like ...
Elias Eckmann   +3 more
wiley   +1 more source

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