Results 301 to 310 of about 2,555,131 (350)
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The perturbational MO method for saturated systems

Journal of Chemical Education, 1979
Outlines a molecular orbital approach to the problem of predicting and correlating bond dissociation energies in saturated hydrocarbons.
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A proposed method for dynamic fitting of MOS model parameters

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1993
A method for optimization of MOS model parameters is introduced. The method is based upon dynamically fitting the measured frequency response of a reconfigurable ring oscillator. The ring oscillator contains two added switching transistors and two loading capacitors.
Ferenc Kovács, Gábor Hosszú
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Interactive quantum chemistry: A divide‐and‐conquer ASED‐MO method

Journal of Computational Chemistry, 2012
AbstractWe present interactive quantum chemistry simulation at the atom superposition and electron delocalization molecular orbital (ASED‐MO) level of theory. Our method is based on the divide‐and‐conquer (D&C) approach, which we show is accurate and efficient for this non‐self‐consistent semiempirical theory.
Maël Bosson   +4 more
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Comparison of semiempirical MO methods applied to large molecules

Journal of Computational Chemistry, 1991
AbstractThe heats of formation for 19 molecules have been calculated with PM3 and AM1 semiempirical methods. The values obtained have been compared with experimental heats of formation. With PM3 and AM1 the average differences between calculated and experimental heats of formation are 8.45 and 12.34 kcal mol−1 respectively.
SCANO, PAOLA, C. THOMSON
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Using the Quasistatic Method for MOS Measurements

Review of Scientific Instruments, 1973
The quasistatic technique used to obtain MOS capacitance voltage characteristics and interface-state density is finding increased use. While the basic technique has been described, it is felt that a detailed description of the apparatus setup and measurement technique will prove useful.
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Interpretation of the structure of polyhalogen complexes by the mo‐method

Recueil des Travaux Chimiques des Pays-Bas, 1959
AbstractThe structure of interhalogen compounds, polyhalide ions, and positive polyhalogen ions is discussed in terms of the LCAO‐MO method. The molecular orbitals were represented by a linear combination of the outerp‐orbitals of the halogen atoms. The Coulomb integrals were considered as a function of the electro‐negativity and the formal charge of ...
E. E. Havinga, E. H. Wiebenga
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Threshold voltage extraction methods for MOS transistors

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2002
The threshold voltage of the MOS transistor is a very important parameter used in all circuit simulation programs. The aim of this paper is to compare several largely applied threshold voltage extraction methods used both for long channel and short channel MOSFETs.
L. Dobrescu   +3 more
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Application of refined MO method to hafner's hydrocarbons

Tetrahedron, 1964
Abstract Calculations have been made for Hafner's hydrocarbons using a refined form of the Huckel MO method in which dependence of ‘Coulomb’ integral on charge density and ‘resonance’ integral on bondlength via bond order have been allowed for in a selfconsistent manner.
H. Chatterjee, M.A. Ali
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Zum Formalismus der LCPO-MO-Methode

Monatshefte f�r Chemie, 1979
Based on the combination ofPars-Orbitals (PO) the LCPO-MO-Method has been described for the quantum chemical treatment of large molecules which are divided in reasonable fragments. The secular matrix constructed from the Eigenvalues and parameters of the molecular fragments has a characteristic block-form.
Winfried Mientus   +2 more
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Potential energy integrals in semiempirical MO methods

International Journal of Quantum Chemistry, 1974
AbstractThe two‐center core‐electron attraction integral VAB in zero‐differential overlap semiempirical MO methods is examined. It is concluded that core‐valence orthogonality and valence symmetrical orthogonalization effects must be considered, and that these effects provide justification for the CNDO/2 approximation VAB = ZBγAB.
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