Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie +16 more
wiley +1 more source
Digital Learning in Motion: Exploring Mobile Device Use in Mexican Residents. [PDF]
Gutiérrez Hernández A +3 more
europepmc +1 more source
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim +9 more
wiley +1 more source
Psychological effects of hybrid SCMC with mobile device management: distraction, classroom atmosphere, and foreign language anxiety. [PDF]
Liu X, Zhu J.
europepmc +1 more source
Exploring park visitation trends during the Covid-19 pandemic in Hungary by using mobile device location data. [PDF]
Csomós G, Borza EM, Farkas JZ.
europepmc +1 more source
Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry
A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming +4 more
wiley +1 more source
Fungal recognition in vaginal discharge using deep learning analysis of mobile device-acquired microscopic images. [PDF]
Pongpom M +7 more
europepmc +1 more source
High-accuracy model recognition method of mobile device based on weighted feature similarity. [PDF]
Li R, Wang X, Luo X.
europepmc +1 more source
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Parkinson's disease severity clustering based on gait activity from mobile device. [PDF]
Sri-Iesaranusorn P +4 more
europepmc +1 more source

