Results 41 to 50 of about 54,530 (291)
Local Thermal Conductivity Patterning in Rotating Lattice Crystals of Anisotropic Sb2S3
Advanced Functional Materials, EarlyView.Microscale control of thermal conductivity in Sb2S3 is demonstrated via laser‐induced rotating lattice crystals. Thermal conductivity imaging reveals marked thermal transport anisotropy, with the c axis featuring amorphous‐like transport, whereas in‐plane directions (a, b) exhibit 3.5x and 1.7x larger thermal conductivity.
Eleonora Isotta +13 more
wiley +1 more source
Wafer‐Scale Synthesis of Mithrene and its Application in UV Photodetectors
Advanced Functional Materials, EarlyView.A controlled tarnishing step on the silver surface precedes the solid‐vapor‐phase chemical transformation into silver phenylselenolate thin films. The approach yields crystals exceeding 1 µm with improved in‐plane orientation. Integration on graphene phototransistors demonstrates high photoresponsivity, positioning mithrene as a promising material for ...
Maryam Mohammadi +8 more
wiley +1 more source
Supramolecular MaterialsChemodynamic therapy, which relies on the generation of cytotoxic radicals, can be amplified by a nanoplatform that produces hydroxyl radicals while also compromising natural radical scavenging mechanisms.
Wei Ma +9 more
doaj +1 more source
Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing
Advanced Functional Materials, EarlyView.In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee +12 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A roll‐to‐roll exfoliation method is demonstrated that preserves the crystallographic alignment of anisotropic 2D materials over large areas, enabling scalable fabrication of directional electronic and optoelectronic devices. Abstract Anisotropic 2D materials such as black phosphorus (BP), GeS or CrSBr, exhibit direction‐dependent optical and ...
Esteban Zamora‐Amo +14 more
wiley +1 more source
Wavelet Analysis Method to Solve the Problem of Wireless Location Tracking
Dianxin kexue, 2013 The signal of non-line-of-sight propagation（NLoS）largely determine the positioning accuracy of the mobile station in wireless location,the wavelet analysis theory has obvious advantages in signal processing.A positioning and tracking algorithm of the ...
Baoquan Chen, Yongyi Mao
doaj +2 more sources
Formal Analysis of A Novel Mutual Authentication and Key Agreement Protocol
Journal of Computer Science and Technology, 2011 This research work analyzes the universal mobile telecommunication system (UMTS) authentication and key agreement (AKA) protocol, which suffers from the traffic bottleneck at home location register and authentication center (HLR/AuC).
Ja'afer M. al Saraireh +3 more
doaj
Advanced Functional Materials, EarlyView.A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley +1 more source
Advanced Functional Materials, EarlyView.Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods +15 more
wiley +1 more source
Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing
Advanced Functional Materials, EarlyView.This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki +7 more
wiley +1 more source