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Characterization Of MOCVD Films
SPIE Proceedings, 1989The far infrared reflectance technique has been used to characterize ZnTe and CdTe films grown using Metal Organic Chemical Vapor Deposition (MOCVD) on GaAs substrates. Carrier concentrations, derived from the reflectance measurements, decreased with increasing ZnTe film thickness as a result of the large lattice mismatch between ZnTe and GaAs.
W. H. Wright +3 more
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MRS Proceedings, 1993
ABSTRACTThe overall objective of this research is to develop source materials for doping AIGaAs. We compared Er(C5H5)3 to Er{N[Si(CH3)3]2)3 for purity, decomposition kinetics and doping of germanium films deposited from Ge(CH3)4 in a hydrogen atmosphere. Cyclopentadienyl erbium left large amounts of carbon both in pure metal films, and in the germanium
Anton C. Greenwald +2 more
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ABSTRACTThe overall objective of this research is to develop source materials for doping AIGaAs. We compared Er(C5H5)3 to Er{N[Si(CH3)3]2)3 for purity, decomposition kinetics and doping of germanium films deposited from Ge(CH3)4 in a hydrogen atmosphere. Cyclopentadienyl erbium left large amounts of carbon both in pure metal films, and in the germanium
Anton C. Greenwald +2 more
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1992
Fur die plasmaunterstutzte Abscheidung von Verschleisschutzschichten aus der Gasphase wurden als Ausgangsverbindungen metallorganische Verbindungen (MOV) benutzt. Unter Verwendung von Tetrakis-(diethylamido)-titan und Tetrakis-(dimethylamido)-titan wurde der Einflus der Substrattemperatur zwischen 200 und 500 °C auf die wichtigsten Schichteigenschaften
H.-R. Stock, H. Berndt, P. Mayr
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Fur die plasmaunterstutzte Abscheidung von Verschleisschutzschichten aus der Gasphase wurden als Ausgangsverbindungen metallorganische Verbindungen (MOV) benutzt. Unter Verwendung von Tetrakis-(diethylamido)-titan und Tetrakis-(dimethylamido)-titan wurde der Einflus der Substrattemperatur zwischen 200 und 500 °C auf die wichtigsten Schichteigenschaften
H.-R. Stock, H. Berndt, P. Mayr
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Optimization of MOCVD grown InGaP metamorphic buffers with MOCVD growth conditions and surfactant
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013InGaP metamorphic (MM) buffers are utilized in inverted metamorphic solar cells which offer high efficiency and provide for low cost and weight flexible solar cells. Metamorphic buffers are typically produced by metal organic chemical vapor deposition (MOCVD) technology and allow for a change in InGaP lattice constant while managing dislocation density
Chris W. Ebert +4 more
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IEEE Transactions on Microwave Theory and Techniques, 1986
Low-noise HEMT AIGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature.
K. Tanaka +7 more
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Low-noise HEMT AIGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature.
K. Tanaka +7 more
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2001
The metalorganic chemical vapor deposition (MOCVD) of II-VI semiconducting compounds (II-IVs) has been studied extensively since 1980, due to the relevance of these materials in many ®elds of optoelectronics. The MOCVD growth of II-VIs today includes wide-band-gap binary compounds, ternary and quaternary pseudobinary alloys for applications in blue ...
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The metalorganic chemical vapor deposition (MOCVD) of II-VI semiconducting compounds (II-IVs) has been studied extensively since 1980, due to the relevance of these materials in many ®elds of optoelectronics. The MOCVD growth of II-VIs today includes wide-band-gap binary compounds, ternary and quaternary pseudobinary alloys for applications in blue ...
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Homoepitaxy of YBa2Cu3Ox by MOCVD
1996We have investigated the surface of high quality YBa2Cu2Ox single crystal substrates, fabricated from YBa2Cu3Ox single crystals grown by the crystal pulling method, for homoepitaxy. They have good crystallinity with χmin of under 2% evaluated by Rutherford backscattering spectrometry and good surface morphology with unit-cell steps observed by atomic ...
Hideaki Zama +5 more
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2020
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MOCVD superconducting oxide films
Journal of Crystal Growth, 1991Abstract Preparation of high- T c superconducting oxide films by MOCVD, their films structure and superconducting properties are reviewed from the standpoint of “nano-composites” and “fine-composites”. Y-Ba-Cu-O (YBCO) films formed on SrTiO 3 (100) at 850°C showed a superconducting transition temperature with zero resistivity above 90 K.
Toshio Hirai, Hisanori Yamane
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Plasma stimulated MOCVD of GaAs
Journal of Crystal Growth, 1986Abstract A critical examination of the literature on the epitaxial deposition of GaAs from TMG and AsH 3 indicates that at kinetically limited conditions the growth rate is not only determined by the dissociation of the metal-alkyl compound but — at low total pressures — also by that of AsH 3 .
H. Heinecke +3 more
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