Results 101 to 110 of about 1,065 (169)

NbOx Mott Memristor‐Based Oscillatory P‐trit for Ternary Potts Machine

open access: yesAdvanced Science, EarlyView.
A ternary Potts machine utilizing NbOx‐based probabilistic trits (p‐trits) is demonstrated for efficient combinatorial optimization. By leveraging the electro‐thermal switching dynamics of NbOx memristors, this architecture generates three‐state stochastic fluctuations.
Hakseung Rhee   +10 more
wiley   +1 more source

Computation and Structure‐Guided Arginine Scanning Engineers a Hyperactive AP Endonuclease for Multiplex Viral RNA Sensing

open access: yesAdvanced Science, EarlyView.
Computational and structure‐guided arginine scanning rewires the DNA‐binding interface of APE1 to create APE1‐Evo, a hyperactive yet specific AP endonuclease. Integrated into the NAPTUNE‐V2.0 cascade, APE1‐Evo enables amplification‐free, multiplex viral RNA sensing for dengue virus and influenza A/B, highlighting a general strategy for engineering ...
Junlan Wang   +20 more
wiley   +1 more source

A Rigid–Foldable Kirigami‐Inspired Metamorphic Mechanism With Programmable Motion Modes and Self‐Locking

open access: yesAdvanced Science, EarlyView.
Geometric constraint reconfiguration enables a rigid–foldable kirigami‐inspired mechanism to switch between twisting, directional translation, and self‐locking states. By encoding multifunctionality directly into its architecture, the mechanism achieves multimodal motion and passive locking without reassembly, providing a compact platform for adaptive ...
Jianlin Wang, Zhongmin Song, Ketao Zhang
wiley   +1 more source

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

open access: yesAdvanced Science, EarlyView.
This study employs cryogenic magneto‐terahertz nanoscopy to reveal the real‐space electrodynamics of the colossal magnetoresistance transition. By capturing the terahertz electrodynamic evolution of field‐driven spin switching, the work unveils the dissipative dynamics of emergent metallic states, providing a high‐frequency view of coupled spin‐charge ...
Samuel Haeuser   +6 more
wiley   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

open access: yesAdvanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park   +6 more
wiley   +1 more source

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