Results 171 to 180 of about 752,870 (293)

Auxeticity‐by‐Assembly: Interlocking Modular Auxetic Metamaterials with Selectively Activatable AgNW–Graphene Oxide‐EGaIn Composite Interconnects for Scalable Freeform Photovoltaic Modules

open access: yesAdvanced Functional Materials, EarlyView.
Auxeticity‑by‑Assembly converts freeform photovoltaics from cut‑defined layouts to assembly‑defined systems. Standardized interlocking units generate negative‑Poisson‑ratio, reconfigurable architectures, while hinge regions are wired by selectively activatable AgNW–GO@EGaIn composite interconnects and a folding‑enabled interconnector layer. A decimeter‑
Seok Joon Hwang   +15 more
wiley   +1 more source

Optoelectronic Control of Redox Dynamics in POM Memristors for Noise‐Resilient Speech and Hardware‐Level Motion Recognition

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic control of redox‐active polyoxometalate clusters in polymer matrices yields hybrid memristors with switchable volatile and non‐volatile modes, enabling reservoir‐type in‐sensor optical preprocessing and stable multilevel synapses for multimodal neuromorphic computing, including noise‐tolerant audiovisual keyword recognition and hardware ...
Xiangyu Ma   +13 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun   +8 more
wiley   +1 more source

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