Results 201 to 210 of about 8,065,895 (294)

Cryogenic Deformation Behavior of TiAl and Insights Into Embrittlement After High‐Temperature Exposure Combined With Secondary Ion Mass Spectroscopy of Near Surface Chemistry

open access: yesAdvanced Engineering Materials, EarlyView.
Near‐surface deuterium enrichment profiles for different microstructural types of TiAl after exposure at 700 °C in a heavy water‐containing environment. The deuterium levels are significantly higher than expected from natural occurrence, indicating that the heavy water dissociated during the exposure treatment and entered the specimens.
Jonathan D. H. Paul   +5 more
wiley   +1 more source

Detecting Anomalous Cell Behavior in Electrochemical Battery Testing Using Machine Learning

open access: yesAdvanced Engineering Materials, EarlyView.
Machine‐learning‐based screening enables automated identification of anomalous battery cells from complementary electrochemical tests. A curated battery database supports configuration‐aware comparison of rate‐capability and impedance data. Supervised classification of rate‐test data achieves 90% accuracy, while CNN‐VAE‐based impedance analysis reaches
Minu Rose   +7 more
wiley   +1 more source

Electrodeposition in Structural Lattices of Variable Architectures

open access: yesAdvanced Engineering Materials, EarlyView.
Electrodeposition enables geometry‐sensitive, autonomous void filling while simultaneously tuning chemical and mechanical properties. The development of approaches that can autonomously fill and heal material voids and yield composites with tailorable properties is increasingly relevant in engineering.
Yeong‐Man Kwon   +3 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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