Results 131 to 140 of about 21,442 (198)

Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs2

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
Bulk CdGeAs2, a well‐known nonlinear optical semiconductor, exhibits an exceptionally large room‐temperature nonlinear Hall effect (NLHE), achieving a record‐high nonlinear Hall responsivity of 2.2 × 10−3 m/V. This pronounced NLHE enables broadband frequency mixing up to the megahertz regime, establishing CdGeAs2 as a promising platform for next ...
Seng Huat Lee, Takumi Iwaya, Kosuke Nakayama, Ting Yong Lim, Lujin Min, Jingyang He, Yu Wang, Venkatraman Gopalan, Zhijian Xie, Xing‐Chen Pan, Yong P. Chen, Tay‐Rong Chang, Hsin Lin, Liang Fu, Kouji Segawa, Takafumi Sato, Zhiqiang Mao   +16 more
wiley   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Advanced Materials, Volume 38, Issue 7, 2 February 2026.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu, Xiaoshi Qian, Dahong Qian, Paolo Samorì   +3 more
wiley   +1 more source

“Tear‐And‐Stack” Twisted SrTiO3 Moiré Superlattices for Precise Interfacial Reconstruction and Polar Topology

Advanced Materials, Volume 38, Issue 9, 12 February 2026.
The tear‐and‐stack method enables the creation of twisted SrTiO3 bilayers with accurate twist‐angle control, which yield atomically sharp oxide moiré superlattices with emergent exotic topological polar vortices, thereby opening a new pathway for twistronics based on 2D‐like non‐van der Waals oxides.
Yingli Zhang, Jinxin Ge, Shengyao Su, Yuhao Li, Wenxi Zhang, Longji Lyu, Jiahao Song, Yuxin Liu, Yihan Lei, Haopeng Du, Gaokuo Zhong, Boyuan Huang, Jiangyu Li, Changjian Li   +13 more
wiley   +1 more source

Atomically Resolved Electron Reflectivity at a Metal/Semiconductor Interface

Advanced Science, Volume 13, Issue 9, 13 February 2026.
An atomically flat interface is achieved in the incoherent Al/Ge heterostructure using molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM) reveals a laterally periodic modulation of electron reflectivity with atomic resolution at the commensurate Al/Ge interfacial lattice, originating from the local electronic states.
Ding‐Ming Huang, Jian‐Huan Wang, Jie‐Yin Zhang, Yuan Yao, Hongqi Xu, Jian‐Jun Zhang   +5 more
wiley   +1 more source

Effective elimination of Moiré fringe at the nanoprecipitate/matrix interface. [PDF]

Appl Microsc
Heo YU, Lee D, Trang TTT, Hong C.
europepmc   +1 more source

Persistent Magnetism and Tunable Doping of Monolayer Graphene via Europium Density Modulation

Advanced Science, Volume 13, Issue 7, 3 February 2026.
The modulation of europium density at the graphene/rhenium interface enables electron doping of monolayer graphene both beneath and beyond the van Hove singularity. The interfacial europium is ferromagnetic, with a transition from a mixed Eu(II)/Eu(III) valence in the dense phase to a pure Eu(II) state in the diluted phase.
M. Jugovac, I. Cojocariu, G. Bihlmayer, P. Gargiani, M. Valvidares, C. A. Brondin, S. Blügel, A. Locatelli, T. O. Mentes, P. Perna   +9 more
wiley   +1 more source

Study of the effect of pinning size on the critical current density in a superconducting tape with a Moiré triangular pinning array at magic angles. [PDF]

Sci Rep
Ghanavati F, Hosseini M, Owjifard Z, Moftakharzadeh A.   +3 more
europepmc   +1 more source

Approaching the Monolayer Limit of Carbon Layers by Pyrolysis of Polymer Films

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Wafer‐scale functional devices based on pyrolyzed photoresist films are synthesized directly on target substrates without catalysts or transfer steps, with channels reaching the monolayer limit (0.34 nm). X‐ray photoelectron spectroscopy confirms predominant sp2 character, Raman spectroscopy reveals evolving nanocrystallinity, and transmission electron
Natalie Galfe, Florian Herdl, Sebastian Klenk, Moritz Quincke, Cormac Ó Coileáin, Kangho Lee, Ute Kaiser, Georg S. Duesberg   +7 more
wiley   +1 more source

Is There A Pure Electronic Ferroelectric?

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
The search for faster, more reliable ferroelectric materials has shifted from traditional lattice‐driven ferroelectrics, which rely on slow ionic displacements, to electronic ferroelectrics, where polarization is governed by electronic ordering. This shift enables ultrafast switching, low‐field operation, and resistance to fatigue.
Xudong Wang, Guichen Teng, Xiangjian Meng, Zhenxiang Cheng, Tie Lin, Hao Shen, Xiaodan Wang, Jianlu Wang, Junhao Chu   +8 more
wiley   +1 more source

Synthesis of incommensurate moiré structures with short-range-ordered charge density modulation. [PDF]

Nat Commun
Guo H, Huang Z, Gao Y, Chen H, Zhang H, Fang Q, Ye Y, Han X, Cao Z, Wang J, Zhou R, Li Z, Shen C, Yang H, Chen H, Yao W, Wang Z, Gao HJ.   +17 more
europepmc   +1 more source