Results 41 to 50 of about 21,442 (198)

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek   +8 more
wiley   +1 more source

Exploring Wigner crystals in two-dimensional and moiré systems: from spectroscopy to theoretical modeling

open access: yesMaterials for Quantum Technology
Electron correlation effects have long been a central issue in condensed matter physics, particularly with the successful development of various two-dimensional materials.
Yifan Ke, Wei Hu
doaj   +1 more source

The Coexistence of van Hove Singularities and Superlattice Dirac Points in a Slightly Twisted Graphene Bilayer

open access: yes, 2013
We consider the electronic structure of a slightly twisted graphene bilayer and show the coexistence of van Hove singularities (VHSs) and superlattice Dirac points in a continuum approximation.
Chu, Zhao-Dong, He, Lin, He, Wen-Yu
core   +1 more source

Atomically Revealing Bulk Point Defect Dynamics in Hydrogen‐Driven γ‐Fe2O3 → Fe3O4 → FeO Transformation

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM uncovers the atomic‐scale mechanisms underlying hydrogen‐driven γ‐Fe2O3→Fe3O4→FeO reduction. In γ‐Fe2O3, oxygen vacancies cluster around intrinsic Fe vacancies, leading to nanopore formation, whereas in Fe3O4, vacancy aggregation is suppressed, preserving a dense structure.
Yupeng Wu   +14 more
wiley   +1 more source

Intercalation events visualized in single microcrystals of graphite. [PDF]

open access: yes, 2017
The electrochemical intercalation of layered materials, particularly graphite, is fundamental to the operation of rechargeable energy-storage devices such as the lithium-ion battery and the carbon-enhanced lead-acid battery.
Lodico, Jared J   +2 more
core   +2 more sources

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

Amplitude, period and orientation of the moiré patterns in barrier 3D displays

open access: yesJournal of Information Display, 2018
The experimental measurements of the amplitude, period, and orientation of the moiré patterns in a digital autostereoscopic barrier-type 3D display are presented as functions of the angle across a wide angular range with a small increment.
Vladimir Saveljev, Sung-Kyu Kim
doaj   +1 more source

Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches

open access: yes, 2017
Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge.
Chen, Lingxiu   +15 more
core   +1 more source

A simple method for fabricating phase-shifted fibre Bragg gratings with flexible choice of centre wavelength [PDF]

open access: yes, 2009
A simple technique for fabricating phase-shifted fibre Bragg gratings (PSFBGs) without the use of a phase-shifted phase mask is presented. Two, 3-mm long, standard fibre Bragg gratings (FBGs) were inscribed sequentially in singlemode fibre at the same
Chehura, Edmon   +2 more
core   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

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