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370 °C clean for Si molecular beam epitaxy using a HF dip
Applied Physics Letters, 1991D J Eaglesham, G S Higashi
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InAs self‐assembled quantum dots on InP by molecular beam epitaxy
Applied Physics Letters, 1996S Fafard, Z R Wasilewski, J McCaffrey
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Gas source silicon molecular beam epitaxy using silane
Applied Physics Letters, 1987Hiroyuki Hirayama +2 more
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Epitaxial Growth of CdTe on Si by Molecular Beam Epitaxy
Physicalia Magazine, 2008Samain, Louise +4 more
openaire +2 more sources