Results 81 to 90 of about 3,198,521 (185)

Comment on "Improper molecular ferroelectrics with simultaneous ultrahigh pyroelectricity and figures of merit" by Li et al. [PDF]

Sci Adv, 2022
Szafrański M, Katrusiak A.
europepmc   +1 more source

A "breathing" model for the polarization response of relaxer ferroelectrics

The present paper proposes a model of relaxer ferroelectrics, which describes the polarization response of these materials in terms of vibration of the interphase boundary between the polar regions and nonpolar matrix.
Tagantsev, A. K., Glazounov, A. E.
core   +1 more source

Bond engineering of molecular ferroelectrics renders soft and high-performance piezoelectric energy harvesting materials. [PDF]

Nat Commun, 2022
Hu Y, Parida K, Zhang H, Wang X, Li Y, Zhou X, Morris SA, Liew WH, Wang H, Li T, Jiang F, Yang M, Alexe M, Du Z, Gan CL, Yao K, Xu B, Lee PS, Fan HJ.   +18 more
europepmc   +1 more source

Single Molecular Semi-Sliding Ferroelectricity/Multiferroicity

Research
In recent years, the unique mechanism of sliding ferroelectricity with ultralow switching barriers has been experimentally verified in a series of 2-dimensional (2D) materials. However, its practical applications are hindered by the low polarizations, the challenges in synthesis of ferroelectric phases limited in specific stacking configurations, and ...
Tingting Zhong, Hong Zhang, Menghao Wu
openaire   +3 more sources

Improper molecular ferroelectrics with simultaneous ultrahigh pyroelectricity and figures of merit. [PDF]

Sci Adv, 2021
Li W, Tang G, Zhang G, Jafri HM, Zhou J, Liu D, Liu Y, Wang J, Jin K, Hu Y, Gu H, Wang Z, Hong J, Huang H, Chen LQ, Jiang S, Wang Q.   +16 more
europepmc   +1 more source

Ferroelectric AlBN films by molecular beam epitaxy

Applied Physics Letters
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction.
Savant, Chandrashekhar, Gund, Ved, Nomoto, Kazuki, Maeda, Takuya, Jadhav, Shubham, Lee, Joongwon, Ramesh, Madhav, Kim, Eungkyun, Nguyen, Thai-Son, Chen, Yu-Hsin, Casamento, Joseph, Rana, Farhan, Lal, Amit, Huili, Xing, Jena, Debdeep   +15 more
openaire   +2 more sources

Growth of wurtzite ferroelectrics

10791093Thin films with wurtzite crystal structure feature some of the best compatibility with the major semiconductor platforms among ferroelectrics, as well as high remanent polarization, excellent stability, and scalability; making them very ...
Fichtner, Simon, Mi, Zetian, Streicher, Isabel, Maria, Jon Paul, Leone, Stefano, Yang, Samuel, Uehara, Masato, Funakubo, Hiroshi   +7 more
core   +1 more source

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

Advanced Electronic Materials
Charged domain walls in ferroelectrics hold great promise for applications in ferroelectric random‐access memory (FeRAM), with advantages such as low energy consumption, high density, and non‐destructive operation.
Xin Li, Cheng Li, Linming Zhou, Xiangwei Guo, Yuhui Huang, Hui Zhang, Shurong Dong, Yongjun Wu, Zijian Hong   +8 more
doaj   +1 more source

Switchable tribology of ferroelectrics [PDF]

Switchable tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a nanoscale scanning probe—down domains ...
Yeom, Jiwon, Catalan, Gustau, Hong, Seungbum, Cordero Edwards, Kumara, Kim, Daeho, Barceló Mercader, Jordi, Gaponenko, Iaroslav, Musy, Loïc, Han, Seung Min, Paruch, Patrycja, Arias Vicente, Irene, Cho, Seongwoo, Cordero-Edwards, Kumara, Lichtensteiger, Céline, Kim, Hyunji, Arias, Irene, HONG, DANIEL SEUNGBUM, Barceló-Mercader, Jordi   +17 more
core   +1 more source

Precise Design of Molecular Ferroelectrics with High T_C and Tunable Band Gap by Molecular Modification

Molecular ferroelectric materials are widely applied in piezoelectric converters, non-volatile memorizers, and photovoltaic devices due to their advantages of adjustable structure, lightweight, easy processing, and environmental friendliness.
Zi-Mu Li (16612464), Li-Zhuang Chen (1733959), Qiang-Qiang Jia (11959540), Hao-Ran Chen (11288232), Si-Yu Ye (13801713), Jun-Yi Li (2541961), Wen-He Zhong (2006506), Min Wan (550231)   +7 more
core   +1 more source