Results 191 to 200 of about 424,957 (255)

Implantable Ionic Memristors Based on Natural Polymer Heterojunctions

open access: yesAdvanced Functional Materials, EarlyView.
We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee   +6 more
wiley   +1 more source

Early Sepsis Diagnosis as a Global Imperative: The Role of Raman Spectroscopy. [PDF]

open access: yesJ Clin Med
Piccioni A   +9 more
europepmc   +1 more source

Single‐Step Recovery of Water from Stable Crude Oil‐Water Emulsion Using Surface Engineered Hybrid Inorganic‐Polymer Membranes

open access: yesAdvanced Functional Materials, EarlyView.
Atomic layer deposition is used to conformally surface engineer polymeric membranes to fabricate inorganic–organic hybrid membranes. These membranes have exceptionally strong attraction toward water even in high oil containing emulsions, which leads to an extremely strong hydration layer at the interface.
Bratin Sengupta   +8 more
wiley   +1 more source

Diagnostic accuracy of 1H-MRS in detecting the oncometabolite 2-hydroxyglutarate (2HG) in adult-type diffuse gliomas. [PDF]

open access: yesJ Neurooncol
Hebda A   +8 more
europepmc   +1 more source

Gate‐Programmable Linearization of Atomically Thin Nanoelectromechanical Resonators via Duffing Nonlinearity Cancellation

open access: yesAdvanced Functional Materials, EarlyView.
Gate bias is used to cancel Duffing nonlinearity in atomically thin MoS2 drumhead resonators, switching their response from hardening to softening and creating a nearly linear operating point. This electrical control suppresses hysteresis, enables stronger linear drive, and improves signal‐to‐noise ratio, offering a practical route to stable 2D NEMS ...
Pengcheng Zhang   +3 more
wiley   +1 more source

Performance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks

open access: yesAdvanced Functional Materials, EarlyView.
This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.
Hyun‐Soo Kim   +14 more
wiley   +1 more source

Colossal emergent inductance in a molecular memristor. [PDF]

open access: yesSci Rep
Oshima Y   +4 more
europepmc   +1 more source

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