Results 161 to 170 of about 11,157 (266)

Wet‐Transferred MoS2 on Passivated InP: A Van der Waals Heterostructure for Advanced Optoelectronic Applications

open access: yesphysica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi   +8 more
wiley   +1 more source

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2

open access: yesSmall, EarlyView.
The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid   +13 more
wiley   +1 more source

Improving the Performance of a Ballistic Protection Composite with Either Graphene Oxide or Molybdenum Disulfide. [PDF]

open access: yesACS Omega
Marciano de Oliveira Cremonezzi J   +6 more
europepmc   +1 more source

Binder Design in Extrusion‐Based 3D Printing of Electrodes: Enhancing Printability and Electrochemical Performance in Energy Storage Devices

open access: yesSmall, EarlyView.
Binder design plays a pivotal role in extrusion‐based 3D printing of energy storage electrodes by simultaneously governing ink printability and electrochemical performance. This review examines how diverse binder materials and design strategies are employed to enable printability while addressing key electrochemical challenges in energy storage devices,
Akesh Manimendra Badalge   +7 more
wiley   +1 more source

Fast Growth of Centimeter-Scale Molybdenum Disulfide Single Crystal for Energy-Efficient Logic Circuits. [PDF]

open access: yesResearch (Wash D C)
Zheng B   +15 more
europepmc   +1 more source

Preventing Plasma‐Induced Resist Hardening in Molybdenum Disulfide Transistors via Sacrificial Metal Mask Lithography

open access: yesSmall, EarlyView.
Photoresist (PR) residue significantly degrades the electrical performance of 2D semiconductors such as MoS2. In particular, the intrinsically ultrathin nature of these materials makes them highly susceptible to damage during conventional PR cleaning procedures.
Dahyeon Kim   +9 more
wiley   +1 more source

Integration of Refractive Microlenses on BP/MoS2 Photodiodes for Enhanced Infrared Photodetection

open access: yesSmall, EarlyView.
This study demonstrates the successful integration of black phosphorus/molybdenum disulfide infrared photodetectors with refractive microlenses to significantly enhance detection. The design achieves a 20‐fold photocurrent enhancement, enabling a room‐temperature detectivity of 1.83 × 109 cmHz1/2W−1, and demonstrates high‐resolution (1023 × 768) single‐
Varsha Ashwin Vedaraj   +11 more
wiley   +1 more source

Phase-Pure 1T' Molybdenum Disulfide Synthesis and Stabilization. [PDF]

open access: yesSmall Sci
Guo Z   +6 more
europepmc   +1 more source

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