Results 51 to 60 of about 31,416 (277)

Electrocatalytic Hydrogen Evolution Reaction on Edges of a Few Layer Molybdenum Disulfide Nanodots

, 2015
The design and development of inexpensive highly efficient electrocatalysts for hydrogen production, underpins several emerging clean-energy technologies.
Benson, John, Li, Meixian, Papakonstantinou, Pagona, Wang, Peng, Wang, Shuangbao   +4 more
core   +2 more sources

Titanium-Doped Molybdenum Disulfide Nanostructures [PDF]

Advanced Functional Materials, 2001
Ti-doped MoS2 nanotubes are produced by pyrolyzing a H2S/N2 mixture over an oxidized Ti–Mo alloy powder at elevated temperatures. Partial substitution of Mo by Ti does not significantly alter the 2H–MoS2 lattice.
W. K. Hsu, Y. Q. Zhu, N. Yao, S. Firth, R. J. H. Clark, H. W. Kroto, D. R. M. Walton   +6 more
openaire   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Preparation and Electrochemical Properties of Molybdenum Disulfide Nanomaterials

Engineering Proceedings
As a transition metal chalcogenide, molybdenum disulfide is an important two-dimensional material. Due to its structural anisotropy, its different morphological structures impact performance. Therefore, improving existing preparation methods enhances its
Pin-Syuan Chen, Yi Hu, Si-Ying Li, Marta Mazurkiewicz-Pawlicka, Artur Małolepszy   +4 more
doaj   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

Water-Assisted Synthesis of Molybdenum Disulfide Film with Single Organic Liquid Precursor

Scientific Reports, 2017
We report on the synthesis of large-area molybdenum disulfide (MoS2) film on an insulating substrate by means of chemical vapor deposition. A single mixture of molybdenum hexacarbonyl (Mo(CO)6) and dimethyl disulfide (C2H6S2) was utilized as an organic ...
Soo Ho Choi, Boandoh Stephen, Ji-Hoon Park, Joo Song Lee, Soo Min Kim, Woochul Yang, Ki Kang Kim   +6 more
doaj   +1 more source

Method of lubricating rolling element bearings Patent [PDF]

, 1970
Solid lubricant applied to porous roller bearings prior to use in ultrahigh ...
Glenn, D. C.
core   +1 more source

Line Defects in Molybdenum Disulfide Layers

, 2013
Layered molecular materials and especially MoS2 are already accepted as promising candidates for nanoelectronics. In contrast to the bulk material, the observed electron mobility in single-layer MoS2 is unexpectedly low.
Albu-Yaron A., Andrey N. Enyashin, Bar-Sadan M., Bar-Sadan M., Bollinger M. V., Coleman J. N., Enyashin A. N., Enyashin A. N., Enyashin A. N., Fivaz R., Gotthard Seifert, Houben L., Jia C. L., Kam K. K., Kaplan-Ashiri I., Kim D., Komsa H. P., Lauritsen J. V., Lee Y. H., Lentzen M., Liu K. K., Lothar Houben, Matte H. S. S. R., Maya Bar-Sadan, Najmaei S., Novoselov K. S., Novoselov K. S., Ostwald W., Podzorov V., Radisavljevic B., Seifert G., Seifert G., Shiojiri M., Stadelmann P. A., van der Zande A. M., Wilson J. A., Zhan Y. J., Zou X. L.   +37 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source