Results 211 to 220 of about 137,869 (297)

Construction of a Free-Standing Bismuth Carbon Nanofiber-Based Composite Anode Integrated with Molybdenum Disulfide for High-Performance Sodium-Ion Batteries. [PDF]

Nanomaterials (Basel)
Mai G, Tian X, Mei Z, Deng Q, Yao L.
europepmc   +1 more source

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2

Small, EarlyView.
The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid, Aashi Gupta, Pavlina Metaxa, A Arifutzzaman, Hariprasad Kuduvan, Rahil Haria, Michele Conroy, Ian Campbell, Ageeth A Bol, James Connolly, Jun Lin, Ian Povey, Ray Duffy, Gerard M O'Connor   +13 more
wiley   +1 more source

New theoretical insights into doping-induced enhancement of ORR activity in molybdenum disulfide: d-p hybridization or the Jahn-Teller effect? [PDF]

Chem Sci
Chen JC, Pei MJ, Yu WB, Gao X, Zeng Q, Xu JM, Yan W, Liu Y, Luo GQ, Zhang J.   +9 more
europepmc   +1 more source

Broadband and Enhanced Second‐Harmonic Generation in Metallic 3R‐TaS2

Small, EarlyView.
A pronounced and robust SHG response has been observed in metallic 3R‐TaS2. It shows broadband SH conversion from 1020 nm to 1410 nm. Moreover, compared to the sapphire substrate, 3R‐TaS2 flakes with various thicknesses on the gold substrate showed different SHG enhancement; the enhancement factors range from 2.7 to 45.5.
Ruo‐Si Chen, Chuanyu Wang, Xiangqi Liu, Zhuoyuan Lu, Shuyao Qiu, Boqing Liu, Tieyu Lü, Shi‐Rui Zhang, Yanfeng Guo, Yuerui Lu   +9 more
wiley   +1 more source

Dielectric-Free Molybdenum Disulfide Transistors with In-Plane Gates. [PDF]

ACS Appl Mater Interfaces
Chang CJ, Chen SJ, Chang TH, Lee PT, Chang SW, Lin SY.   +5 more
europepmc   +1 more source

Binder Design in Extrusion‐Based 3D Printing of Electrodes: Enhancing Printability and Electrochemical Performance in Energy Storage Devices

Small, EarlyView.
Binder design plays a pivotal role in extrusion‐based 3D printing of energy storage electrodes by simultaneously governing ink printability and electrochemical performance. This review examines how diverse binder materials and design strategies are employed to enable printability while addressing key electrochemical challenges in energy storage devices,
Akesh Manimendra Badalge, Timothy J. Biddle, Huynh Tam Minh Nguyen, Eric Campbell, Munkhbayar Batmunkh, Tak Kim, Stefanie Feih, Yu Lin Zhong   +7 more
wiley   +1 more source

Zinc Oxide/Molybdenum Disulfide as Nanocomposite for Multifunctional Sensor Prototype. [PDF]

Micromachines (Basel)
Palomera N, Feng P.
europepmc   +1 more source

Phase Engineering of Plasma‐Enhanced Atomic Layer Deposited Molybdenum Disulfide Using High Accuracy Direct Writing With Focused Li+ and Ga+ Ion Beams and Ultrashort Pulse Laser

Small, EarlyView.
In the context of phase heterostructures on two‐dimensional materials, a high‐precision direct writing approach is employed. This involves using a focused ion beam to transform molybdenum disulfide to the metallic 1T phase, followed by retransformation via ultrashort pulse laser processing.
Marvin Krüner, Achim Nadzeyka, Malte Jonas Marius Julian Becher, Zhongquan Liao, Detlef Rogalla, André Clausner, Andreas Ostendorf, Michael Kahl, Claudia Bock   +8 more
wiley   +1 more source

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices. [PDF]

Nano Lett
Cruces S, Ganeriwala MD, Lee J, Ran K, Jo J, Völkel L, Braun D, Canto B, Marín EG, Kalisch H, Heuken M, Vescan A, Dunin-Borkowski RE, Mayer J, Godoy A, Daus A, Lemme MC.   +16 more
europepmc   +1 more source

Preventing Plasma‐Induced Resist Hardening in Molybdenum Disulfide Transistors via Sacrificial Metal Mask Lithography

Small, EarlyView.
Photoresist (PR) residue significantly degrades the electrical performance of 2D semiconductors such as MoS2. In particular, the intrinsically ultrathin nature of these materials makes them highly susceptible to damage during conventional PR cleaning procedures.
Dahyeon Kim, Yanfeng Zhao, Sungyeon Kim, Seungchan Lee, Sangmin Eom, Tae Yeon Kim, Hyun Seok Lee, Joonki Suh, Byungjo Kim, Myungsoo Kim   +9 more
wiley   +1 more source