Results 111 to 120 of about 23,332 (237)

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Emergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds

Advanced Electronic Materials, EarlyView.
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner, Ali Sarikhani, Theo Volz, Mathew Pollard, Mitchel Vaninger, Xiaoqing He, Steven Kelley, Jacob Cook, Avinash Sah, John Clark, Hunter Lucker, Cheng Zhang, Paul Miceli, Yew San Hor, Xiaoqian Zhang, Guang Bian   +15 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Improved Molybdenum Dioxide Atomic Layer Deposition Process by Introducing Pre‐Reduction Agent

Advanced Electronic Materials, EarlyView.
This study investigates MoO2 thin films deposited by ALD as electrode materials for next‐generation DRAM capacitors. A pre‐reduction step using ethanol is introduced to control the oxidation state of MoOx and to suppress surface morphology degradation.
Soo Min Yoo, Seungwoo Lee, Chaeyeong Hwang, Woojin Jeon   +3 more
wiley   +1 more source

Enhancing the Outcome of Crystallographic Fragment Screening by Choosing the Optimal Protein Crystal Form. [PDF]

Small Sci
Barthel T, Wollenhaupt J, Benz LS, Reinke P, Zhang L, Oelker M, Lennartz F, Taberman H, Mueller U, Meents A, Hilgenfeld R, Weiss MS.   +11 more
europepmc   +1 more source

Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

Advanced Electronic Materials, EarlyView.
This article presents a comprehensive co‐doping toolkit to optimize the performance and reliability of fluorite‐structure ferroelectrics like hafnium oxide. By employing homogeneous and heterogeneous co‐doping strategies, precise control over crystallization behavior, polarization hysteresis, and oxygen vacancy distribution is achieved.
Shouzhuo Yang, David Lehninger, Markus Neuber, Amir Pourjafar, Yannick Raffel, Ayse Sünbül, Anant Rastogi, Peter Reinig, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer   +10 more
wiley   +1 more source

Growth and morphological control of metastable KDP crystals using defect-free seeds. [PDF]

RSC Adv
Li C, Zhang C, Ren Y.
europepmc   +1 more source

Recent Advances in Programmable Metasurfaces and Meta‐Devices

Advanced Electronic Materials, EarlyView.
Programmable metasurfaces enable various novel functionalities by dynamically tuning electromagnetic wavefronts. This article provides a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, covering electrical, thermal, optical, and mechanical control mechanisms.
Linda Shao, Chong He, Nan Wang, Liming Si, Weiren Zhu   +4 more
wiley   +1 more source

Phase engineering of relaxor ferroelectricity in van der Waals crystal. [PDF]

Nat Commun
Yang T, Ma Y, Zheng D, Deng W, Liu C, Chen M, Mai K, Lv X, Zhang X, Xu J, Wang B, Li Y, Tang M, Tian G, Yang W, Zhang X.   +15 more
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source